生命周期: | Not Recommended | 零件包装代码: | SC-63 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.32 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.23 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 40 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FS10AS-2-T1 | MITSUBISHI | Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Met |
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FS10AS-2-T13 | RENESAS | High-Speed Switching Use Nch Power MOS FET |
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FS10AS-2-T2 | MITSUBISHI | Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Met |
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FS10AS3 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-252 |
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FS10AS-3 | MITSUBISHI | HIGH-SPEED SWITCHING USE |
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FS10AS-3 | POWEREX | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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