Document Number: MRFG35005MT1
Rev. 3, 1/2006
Freescale Semiconductor
Technical Data
Replaced by MRFG35005NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRFG35005MT1
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
• 4.5 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
15
Vdc
DSS
(2)
Total Device Dissipation @ T = 25°C
P
10.5
0.07
W
W/°C
C
D
(2)
Derate above 25°C
Gate-Source Voltage
RF Input Power
V
-5
Vdc
dBm
°C
GS
P
30
in
Storage Temperature Range
T
stg
-65 to +150
175
(1)
Channel Temperature
T
ch
°C
Operating Case Temperature Range
T
-20 to +85
°C
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
(2)
Thermal Resistance, Junction to Case
Class AB
R
θ
JC
14.2
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22-A113, IPC/JEDEC J-STD-020
Rating
Package Peak Temperature
Unit
1
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRFG35005MT1
RF Device Data
Freescale Semiconductor
1