Datasheet > 射频和微波 > 射频/微波开关> FMS2028-000-WP

FMS2028-000-WP

更新时间： 2024-02-13 10:00:44

品牌	Logo	应用领域
FILTRONIC		射频和微波开关射频开关微波开关 GSM
页数	文件大小	规格书
5页	349K
描述
SP6T GaAs Multi-Band GSM Antenna Switch

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技术参数
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FMS2028-000-WP 技术参数

生命周期：	Obsolete	包装说明：	DIE OR CHIP
Reach Compliance Code：	compliant	风险等级：	5.73
Is Samacsys：	N	其他特性：	HIGH ISOLATION
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	45.8 dBm	最大插入损耗：	0.6 dB
最小隔离度：	19.5 dB	功能数量：	1
最大工作频率：	2500 MHz	最高工作温度：	100 °C
最低工作温度：	-40 °C	封装等效代码：	DIE OR CHIP
电源：	2.7 V	射频/微波设备类型：	SP6T
子类别：	RF/Microwave Switches	技术：	CMOS
Base Number Matches：	1

FMS2028-000-WP 数据手册

FMS2028

Preliminary Datasheet v2.1

PREFERRED ASSEMBLY INSTRUCTIONS:

HANDLING PRECAUTIONS:

To avoid damage to

GaAs devices are fragile and should be

handled with great care. Specially designed

collets should be used where possible.

the

devices

care

should be exercised

during

Proper

handling.

Electrostatic

The back of the die is not metallised and the

recommended mounting method is by the use

of conductive epoxy. Epoxy is should be

applied to the attachment surface uniformly

and sparingly to avoid encroachment of epoxy

on to the top face of the die and ideally should

Discharge

(ESD)

precautions should be observed at all stages

of storage, handling, assembly, and testing.

These devices should be treated as Class 1A

(0-500 V) as defined in JEDEC Standard No.

22-A114. Further information on ESD control

measures can be found in MIL-STD-1686 and

MIL-HDBK-263.

not exceed half the chip height.

For

automated dispense Ablestick LMISR4 is

recommended and for manual dispense

Ablestick 84-1 LMI or 84-1 LMIT are

recommended. These should be cured at a

temperature of 150°C for 1 hour in an oven

especially set aside for epoxy curing only. If

possible the curing oven should be flushed

with dry nitrogen.

APPLICATION NOTES & DESIGN DATA:

Application Notes and design data including S-

parameters, noise data and large-signal

models are available on the Filtronic web site.

This part has gold (Au) bond pads requiring

the use of gold (99.99% pure) bondwire. It is

recommended that 25.4µm diameter gold wire

is used. Thermosonic ball bonding is preferred.

A nominal stage temperature of 150°C and a

bonding force of 40g has been shown to give

effective results for 25µm wire. Ultrasonic

energy shall be kept to a minimum. For this

bonding technique, stage temperature should

not be raised above 200°C and bond force

should not be raised above 60g. Thermosonic

wedge bonding and thermocompression

wedge bonding can also be used to achieve

good wire bonds.

DISCLAIMERS:

This product is not designed for use in any

space based or life sustaining/supporting

equipment.

ORDERING INFORMATION:

PART NUMBER

FMS2028-000-FF

FMS2028-000-WP

FMS2028-000-EB

DESCRIPTION

Wafer mounted on film frame

Die in Waffle-pack

(Gel-pak available on request)

Bonds should be made from the die first and

then to the mounting substrate or package.

The physical length of the bondwires should be

minimised especially when making RF or

ground connections.

Die mounted on evaluation board

Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

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