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FMS2016-005

更新时间： 2024-01-10 13:18:15

品牌	Logo	应用领域
FILTRONIC		开关
页数	文件大小	规格书
6页	200K
描述
High Power Reflective GaAs SP4T Switch

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技术参数
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FMS2016-005 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, QFN-12	Reach Compliance Code：	unknown
风险等级：	5.72	其他特性：	HIGH RELIABILITY, HIGH ISOLATION
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	45.8 dBm	最大插入损耗：	0.85 dB
最小隔离度：	26 dB	JESD-609代码：	e3
功能数量：	1	最高工作温度：	100 °C
最低工作温度：	-40 °C	封装等效代码：	DIE OR CHIP
端口终止：	REFLECTIVE	射频/微波设备类型：	SP4T
子类别：	RF/Microwave Switches	技术：	GAAS
端子面层：	Matte Tin (Sn) - annealed	Base Number Matches：	1

FMS2016-005 数据手册

FMS2016QFN-1

Preliminary Data Sheet ^2.1

High Power Reflective GaAs SP4T Switch

Features:

Functional Schematic

♦

3x3x0.9mm Packaged pHEMT Switch

ANT

NiPdAu finish for Military and High

reliability applications

♦

Excellent low control voltage performance

Excellent harmonic performance under

GSM/DCS/PCS/EDGE power levels

Very high isolation: >29dB at 1.8GHz

Very low Insertion loss: 0.65dB at 1.8GHz

Very low control current

RF1

RF3

RF2

RF4

♦

Description and Applications:

The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide

antenna switch designed for use in mobile handset applications. The die is fabricated using the

Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for

switch applications. The FMS2016QFN is designed for use in dual/tri and quad band GSM handset

antenna switch modules and RF front-end modules. It can also find use in other applications where

high power and linear RF switching is necessary.

Electrical Specifications: (T_AMBIENT= 25°C,V_ctrl= 0V/2.5V, Z_IN= Z_OUT= 50Ω)

Parameter

Test Conditions

Min

Typ

Max

Units

Insertion Loss

0.5 – 1.0 GHz

1.0 – 2.0 GHz

<0.55

<0.65

Return Loss

0.5 – 2.5 GHz

Isolation

0.5 – 1.0 GHz

1.0 – 2.0 GHz

RF1 – RF3 and RF2 – RF4

Isolation

0.5 – 1.0 GHz

1.0 – 2.0 GHz

RF1 – RF2

Isolation

0.5 – 1.0 GHz

1.0 – 2.0 GHz

RF3 – RF4

2nd Harmonic Level

3rd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +35 dBm, 100% Duty Cycle

-75

dBc

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +35 dBm, 100% Duty Cycle

-75

dBc

Switching speed : Trise, Tfall

Ton, Toff

10% to 90% RF and 90% to 10% RF

<0.3

µs

50% control to 90% RF and 50% control to 10% RF

1.0

Control Current

+35dBm RF input @1GHz

<10

µA

Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)

Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com

Contact Details (USA): Tel: +1 (408) 850-5790

Fax: +1 (408) 850-5766

Email: sales@filcsi.com

Website: www.filtronic.com

12 3 4 5 6

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