FMS2017QFN
Preliminary Data Sheet 2.1
2.4GHz DPDT GaAs Single-Band WLAN Switch
Features:
Functional Schematic
V4
TX / RF1
V3
♦
♦
3x3x0.9mm Packaged pHEMT Switch
Suitable for Single-band WLAN 802.11b/g
Applications
Excellent low control voltage performance
Very low Insertion loss typ. 0.6dB at 2.5GHz
High isolation typ. 23dB at 2.5GHz
♦
♦
♦
ANT2
ANT1
RF3
RF4
♦ Filtronic Advanced GaAs pHEMT Technology
V1
RX / RF2
V2
Description and Applications:
The FMS2017QFN is a low loss, single band Gallium Arsenide antenna diversity switch designed for
use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5µm switch process
technology that offers leading edge performance, optimised for switch applications.
The FMS2017QFN is designed for use in 802.11b/g WLAN modules.
Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/(2.4V,+3.3V), ZIN = ZOUT = 50Ω)
Parameter
Conditions
Min
Typ
Max
Units
Insertion Loss (All Paths)
Isolation (All Paths)
Return Loss
2.5GHz, Small Signal
2.5GHz, Small Signal
0.6
23
dB
dB
2.5GHz, Small Signal
20
dB
P0.1dB
2.5GHz Control Voltage 3.0V
2.4GHz, Pin = 32dBm, Vctrl =2.4V
2.4GHz, Pin = 32dBm, Vctrl =2.4V
Vctrl=2.4V, Pin=20dBm
>33
-65
-65
20
dBm
dBc
dBc
nS
2nd Harmonic Level
3rd Harmonic Level
Switching speed
Note: External DC blocking capacitors are required on all RF ports (typ: 47pF)
All unused ports terminated in 50Ω.
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filcsi.com
Website: www.filtronic.co.uk/semis