Datasheet > FLU35ZM

FLU35ZM

更新时间： 2024-01-06 06:42:20

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	226K
描述
L-Band Medium & High Power GaAs FET

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技术参数
数据手册

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FLU35ZM 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	FLATPACK, R-PQFP-F4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.18
其他特性：	HIGH RELIABILITY	配置：	SINGLE
最小漏源击穿电压：	10 V	FET 技术：	JUNCTION
最高频带：	L BAND	JESD-30 代码：	R-PQFP-F4
元件数量：	1	端子数量：	4
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLATPACK
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

FLU35ZM 数据手册

FLU35ZM

L-Band Medium & High Power GaAs FET

FEATURES

・High Output Power: P1dB=35.5dBm(typ.)

・High Gain: G1dB=11.5dB(typ.)

・Low Cost Plastic(SMT) Package

・Tape and Reel Available

DESCRIPTION

The FLU35ZM is a GaAs FET designed for base station and CPE

application up to a 4.0GHz frequency range. This is a new product

series using a plastic surface mount package that has been optimized

for high volume cost driven applications.

Eudyna’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)

Item

Symbol

VDS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

VGS

-5

20.8

-55 to +150

Tstg

Tch

Channel Temperature

175

RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25^oC)

Item

Symbol

Condition

≤10

Unit

DC Input Voltage

Channel Temperature

VDS

Tch

≤ 145

Igsf

Forward Gate Current

≤19.4

≥-2.0

100

Reverse Gate Current

Gate Resistance

Igsr

Ω

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)

Limit

Typ.

1200

Item

Symbol

Test Conditions

Unit

Max.

Min.

Drain Current

VDS=5V, VGS=0V

IDSS

1800

Transconductance

Pinch-off Voltage

VDS=5V, IDS=800mA

VDS=5V, IDS=60mA

600

-1.0

-2.0

-3.5

Gate-Source Breakdown

Voltage

VGSO

-5

IGS=-60uA

VDS=10V

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

P1dB

34.5

10.5

35.5

11.5

dBm

f=2.0GHz

IDS=0.6IDSS(Typ.)

G1dB

Rth

Thermal Resistance

CASE STYLE: ZM

Channel to Case

C /W

G.C.P.:Gain Compression Point

Note1: Product supplied to this specification are 100% DC performance tested.

Note2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.

Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.

ESD

Class Ⅲ

2000 V～

Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ)

Edition 1.2

Jan 2004

12 3 4 5 6 7 8

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