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FBI5.1B1M1 PDF预览

FBI5.1B1M1

更新时间: 2024-01-18 15:08:38
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
2页 36K
描述
Bridge Rectifiers (In Line)

FBI5.1B1M1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-T4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:UL RECOGNIZED最小击穿电压:40 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED

FBI5.1B1M1 数据手册

 浏览型号FBI5.1B1M1的Datasheet PDF文件第2页 
FBI5.1B1M1.......FBI5.1J1M1  
5 Amp. Glass Passivated Bridge Rectifier  
Plastic  
Case  
Voltage  
100 to 600 V.  
Current  
5.0 A.  
Dimensions in mm.  
25  
3.2  
3.5  
®
_
+
1+ 0.05  
• Glass Passivated Junction Chips.  
UL recognized under component index file  
number E130180.  
L
suffix  
–4  
17.5  
8
7.5  
7.5  
10  
0.7  
Lead and polarity identifications.  
Case: Molded Plastic.  
1
Mounting Instructions  
High temperature soldering guaranteed: 260 ºC – 10 sc.  
Ideal for printed circuit board (P.C.B.).  
High surge current capability.  
Recommended mounting torque: 8 Kg.cm.  
The plastic material carries U/L recognition 94 V-O.  
Maximum Ratings, according to IEC publication No. 134  
FBI5.1B  
1M1  
FBI5.1D  
1M1  
FBI5.1F  
1M1  
FBI5.1J  
1M1  
VRRM  
VRMS  
Peak Recurrent Reverse Voltage (V)  
Maximum RMS Voltage (V)  
100  
70  
200  
140  
80  
300  
210  
125  
600  
420  
250  
VR  
Recommended Input Voltage (V)  
Max. Average forward current with heatsink  
without heatsink  
40  
5.0 A at 100 ºC  
3.0 A at 25 ºC  
IF(AV)  
IFRM  
Recurrent peak forward current  
30 A  
400 A  
800 A2 sec  
IFSM  
10 ms. peak forward surge current  
I2t value for fusing (t = 10 ms)  
Dielectric strength (terminals to case, AC 1 min.)  
Operating temperature range  
Storage temperature range  
I2t  
VDIS  
1500 V  
Tj  
– 40 to + 150 °C  
– 40 to +150 ºC  
Tstg  
Electrical Characteristics at Tamb = 25°C  
VF  
IR  
Max. forward voltage drop per element at IF = 5 A  
1.1 V  
5 A  
Max. reverse current per element atVRRM  
MAXIMUM THERMAL RESISTANCE  
Junction-Case. With Heatsink.  
Junction-Ambient.Without Heatsink.  
R
2.2 ºC/W  
22 ºC/W  
th (j-c)  
R
th (j-a)  
Jan - 00  

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