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FAN3227C PDF预览

FAN3227C

更新时间： 2024-02-02 05:57:16
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 驱动器栅极栅极驱动
页数 文件大小 规格书
12页 459K
描述
Application Review and Comparative Evaluation of Low-Side Gate Drivers

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FAN3227C 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SOIC-8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：1 week风险等级：0.88
Samacsys Confidence：3Samacsys Status：Released
2D Presentation：https://componentsearchengine.com/2D/0T/2714.2.1.pngSchematic Symbol：https://componentsearchengine.com/symbol.php?partID=2714
PCB Footprint：https://componentsearchengine.com/footprint.php?partID=27143D View：https://componentsearchengine.com/viewer/3D.php?partID=2714
Samacsys PartID：2714Samacsys Image：https://componentsearchengine.com/Images/9/FAN3227TMX.jpg
Samacsys Thumbnail Image：https://componentsearchengine.com/Thumbnails/2/FAN3227TMX.jpgSamacsys Pin Count：8
Samacsys Part Category：Integrated CircuitSamacsys Package Category：Small Outline Packages
Samacsys Footprint Name：SO 8L NB (SOIC)Samacsys Released Date：2015-04-16 09:48:08
Is Samacsys：N内置保护：TRANSIENT
高边驱动器：NO接口集成电路类型：FULL BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：4.9 mm湿度敏感等级：1
功能数量：2端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
输出电流流向：SOURCE AND SINK标称输出峰值电流：3 A
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：12 V认证状态：Not Qualified
座面最大高度：1.75 mm子类别：MOSFET Drivers
最大供电电压：18 V最小供电电压：4.5 V
标称供电电压：12 V表面贴装：YES
温度等级：AUTOMOTIVE端子面层：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
断开时间：0.022 µs接通时间：0.017 µs
宽度：3.9 mmBase Number Matches：1

FAN3227C 数据手册

 浏览型号FAN3227C的Datasheet PDF文件第1页浏览型号FAN3227C的Datasheet PDF文件第2页浏览型号FAN3227C的Datasheet PDF文件第4页浏览型号FAN3227C的Datasheet PDF文件第5页浏览型号FAN3227C的Datasheet PDF文件第6页浏览型号FAN3227C的Datasheet PDF文件第7页 
AN-6069  
APPLICATION NOTE  
For a practical example, the gate-source voltage versus total  
gate charge is reproduced from the Fairchild FCP20N60  
power MOSFET datasheet in Figure 4. The curve was  
produced using a test circuit that drives the gate of the  
Device Under Test (DUT) with a small current source of  
3mA. In this example, the gate charge needed to reach the  
threshold voltage of 3V is approximately 7nC. The charge  
required during interval t2, QGS2, is found to be 14nC – 7nC  
VDD  
VGS  
VPL  
VTH  
= 7nC. In interval t3, the value of QGD is found to be QGD  
=
46nC – 14nC = 32nC. In this typical case, the effect of QGD  
on the switching loss is more significant than the  
IL  
contribution resulting from QGS2  
.
IDS  
FCP20N60  
Vo  
VDS  
-IPL  
-IPK  
time  
IG  
t5  
t6  
t7 t8  
t1 t2  
t3  
t4  
Figure 5. MOSFET Turn Off with Inductive Load  
Figure 4. VGS vs. Qg for FCP20N60  
In the t5 interval, IG rises to discharge VGS from VDD to the  
plateau level defined by (2). In the t6 interval, VGS remains  
at the plateau voltage while VDS rises to the off state voltage.  
The t6 interval lasts for a time approximated by:  
With VGS at final drive level, the value for QG,total is known.  
To find the average current required from the bias supply:  
IDD = QG ⋅ fSW  
(6)  
QGD  
where fsw is the switching frequency of the power stage.  
With the average current requirement known, the input  
power drawn from the VDD bias supply can be found as:  
t6 = tVDS,rise  
=
(8)  
IG  
In interval t7, the drain current IDS falls from the value of IL  
to 0 while VGS falls from VPL to VTH. This time interval is  
given by:  
Pdr = VDD ⋅IDD = VDD ⋅QG ⋅ fSW  
(7)  
The circuit waveforms and current paths during inductive  
load turn off are similar to those for turn on, but taken in a  
reverse order. For brevity, the circuit waveforms are  
indicated in Figure 5, but the current paths are not shown.  
QGS,2  
t7 = tIDS,fall  
=
(9)  
IG  
In the t8 interval, VGS is discharged from the threshold  
voltage to zero.  
An equation relating IG to the switching loss during the turn  
off interval is given as:  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
V
× ILOAD  
2
Q GD  
IG,t6  
Q GS 2  
⎛
⎜
⎞
⎟
IN  
PSW .OFF  
=
⋅
(
fSW  
)
⋅
+
(10)  
IG,t7  
⎝
⎠
© 2007 Fairchild Semiconductor Corporation  
Rev. 1.0.3 • 1/6/10  
www.fairchildsemi.com  
3
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