Datasheet > F1174

F1174

更新时间： 2022-11-26 17:34:34

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	48K
描述
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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数据手册

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F1174 数据手册

F1174

POUT VS PIN GRAPH

CAPACITANCE VS VOLTAGE

F1174 POUT VS PIN F=400

MHZ; IDQ=1.6A; VDS=28.0V

F1J 4 DICE CAPACITANCE

1000

180

160

140

120

100

12.50

12.00

11.50

11.00

10.50

10.00

9.50

Ciss

100

Coss

Crss

Efficiency = 55%

9.00

8.50

8.00

VDS IN VOLTS

PIN IN WATTS

POUT

GAIN

IV CURVE

ID AND GM VS VGS

F1J4DICE IV

F1J 4 DICE ID & GM Vs VG

100.00

10.00

1.00

0.10

vg=10v

vg=12v

VDS INVOLTS

Vgs in Volts

vg=2v

Vg=4v

Vg=6v

vg=8v

S11 AND S22 SMITH CHART

PACKAGE DIMENSIONS IN INCHES

REVISION 1/12/98

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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