October 2007
TM
STEALTH II Rectifier
FFPF04S60S
tm
Features
4A, 600V STEALTHTM II Rectifier
The FFPF04S60S is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
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High Speed Switching, trr < 25ns @ IF = 4A
High Reverse Voltage and High Reliability
RoHS compliant
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Applications
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General Purpose
Switching Mode Power Supply
Boost Diode in continuous mode power factor corrections
Power switching circuits
TO-220F-2L
1. Cathode
2. Anode
1. Cathode 2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
Parameter
Ratings
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
600
600
4
V
V
V
A
VRWM
VR
IF(AV)
Average Rectified Forward Current
@ TC = 116oC
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
IFSM
40
A
TJ, TSTG
Operating and Storage Temperature Range
-65 to +150
oC
Thermal Characteristics
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Ratings
Units
oC/W
RθJC
6.8
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
F04S60S
FFPF04S60STU
TO-220F-2L
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50
©2007 Fairchild Semiconductor Corporation
FFPF04S60S Rev. A
1
www.fairchildsemi.com