F0100406B
3.3V 1.25Gbit/s Transimpedance Amplifier
Electrical Characteristics
Tc*=0 to 85°C, VDD=3.1 to 3.6V, VSS=0V,unless specified
Parameters
Symbol
Test Conditions
Value
Units
MIN.
TYP.
45
MAX
Supply Current
IDD
Vi
DC
*1
-
-
-
-
-
-
mA
V
Input Voltage
0.95
2.1
Output Voltage (positive)
Vop
*1
V
Output Voltage (negative)
Gain (positive)
Von
*1
-
-
-
-
2.1
30.0
30.0
1200
-
-
-
-
V
S21p
S21n
Fcp
Single-ended, f=1MHz *1
Single-ended, f=1MHz *1
S21p-3dB
dB
dB
MHz
Gain (negative)
-3dB High Frequency
Cut-off (positive)
-3dB High Frequency
Cut-off (positive)
Fcn
S21p-3dB
-
1100
-
MHz
Input Impedance
Ri
f =1MHz, *1
f =1MHz, *1
f =1MHz, *1
-
-
-
190
55
-
-
-
Ω
Ω
Ω
Output Impedance (positive)
Output Impedance (negative)
Rout
Rout
55
Transimpedance (positive)
Ztp
RL=50Ω,Single-ended, *2
-
5
-
kΩ
Transimpedance (negative)
AGC time constant
Ztn
RL=50Ω,Single-ended ,*2
-
-
5
-
-
kΩ
Tagc
Cout=470pF
24
µsec
* Tc:Back side temperature of wafer
*1 Test circuit is shown [Test Circuits / 1] AC Characteristics].
*2 Zt(p,n)=10^(S21(p,n)/20)×(Ri+50)/2
Optical and Electrical Characteristics
This table values are specified on condition of F0832483T. F0832483T is 2.5Gbps NRZ PIN-PD preamplifier
module using F0100504B. Test circuits of F0832483T are shown in [Test Circuits].
λ=1.3µm, VDD=VPD=+3.1~+3.6V, VSS=GND, Tcm*3=-20~+85°C, unless specified
Parameters
Symbol
Test Conditions
Value
TYP.
Unit
MIN.
-
MAX
-
Transimpedance
Ztm
RL=50Ω,Single-ended,
f =100MHz, *4
5
kΩ
O/E High Cut-off Frequency
O/E Low Cut-off Frequency
Equivalent Input Noise
Sensitivity
Fcoeh
Fcoel
Ztm-3dB, *4
-
-
-
-
900
17
-
-
-
-
MHz
kHz
Cout=470pF
f =100MHz
Inoise
Pin-min
3.5
-29
pA/√Hz
dBm
2.48832Gbps, PRBS2^23-1,
BER=1E-10, *5
Overload
Pin-max
Routm
+1
-
-
-
-
dBm
Output Impedance
No input, f=1MHz, *4
55
Ω
*3 Tcm : case temperature
*4 Show [Test Circuits / 3] Optical & Electrical Characteristics].
*5 Show [Test Circuits / 4] Sensitivity Characteristics].