SFF11N80 Series
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
11 AMP / 800 Volts
0.95 Ω
Part Number / Ordering Information 1/
SFF11N80 __ __ __
N-Channel MOSFET
Screening 2/ __ = Not Screen
TX = TX Level
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TXV = TXV Level
S = S Level
Features:
Lead Option 3/ __ = Straight Leads
DB = Down Bend
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt performance
• Increased Reverse Energy Capability
UB = Up Bend
Package 3/ M = TO-254
Z = TO-254Z
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed, Isolated Package
• Ceramic Seal Package Available. Contact Factory
• TX, TXV, S-Level screening available
• Replacement for IXTH11N80 Types
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
Gate – Source Voltage
VDS
VGS
ID
800
±20
11
Volts
Volts
Amps
Continues Collector Current
150
114
TC = 25ºC
TC = 55ºC
Power Dissipation
PD
Top & Tstg
RθJC
W
ºC
Operating & Storage Temperature
-55 to +175
Maximum Thermal Resistance
0.83
ºC/W
Junction to Case
TO-254 (M)
TO-254Z (Z)
NOTE: All specifications are subject to change without notification.
DATA SHEET #: F00213C
DOC
SCD's for these devices should be reviewed by SSDI prior to release.