Datasheet > F00257_15

F00257_15

更新时间： 2022-02-26 13:58:37

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	54K
描述
N-CHANNEL MOSFET

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F00257_15 数据手册

SFF75N05M

SFF75N05Z

SOLID STATE DEVICES, INC.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

75 AMP

50 VOLTS

15mΩ

DESIGNER'S DATA SHEET

FEATURES:

N-CHANNEL

• Advanced high-cell density withstands high energy

MOSFET

• Very low conduction and switching losses

• Fast recovery drain-to-source diode with soft recovery

• Rugged construction with poly silicon gate

• Ultra low RDS (on) and high transconductance

• Excellent high temperature stability

TO-254 (M)

TO-254Z (Z)

• Very fast switching speed

• Fastrecoveryandsuperiordv/dtperformance

• Increased reverse energy capability

• Low input and transfer capacitance for easy paralleling

• Hermetically sealed package

• TX, TXV and Space Level screening available

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

VALUE

UNIT

Volts

Drain to Source Voltage

Volts

Drain to Gate Voltage (RGS = 1.0 mΩ)

Gate to Source Voltage

+ 20

@TC=25^oC

56^1/

Continuous Drain Current

Amps

^oC

@TC=100^oC

Operating and Storage Temperature

Thermal Resistance, Junction to Case

& T

stg

0JC

-55 to +175

^oC/W

Watts

@ TC = 25^oC

@ TC = 55^oC

150

120

Total Device Dissipation

CASE OUTLINE: TO-254 (Sufix M)

CASE OUTLINE: TO-254Z (Sufix Z)

Pin Out:

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

Available with Glass or Ceramic Seals. Contact Facory for details.

NOTE: All specifications are subject to change without notification.

SCDs for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00257E

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