Datasheet > EST100BN120SN

EST100BN120SN

更新时间： 2024-06-27 12:13:57

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
4页	1357K
描述
SOT-227

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EST100BN120SN 数据手册

EST100BN120SN

Aug. 2023

EST100BN120SN

Ultra-Fast Soft Recovery Diode Module

Equivalent Circuit and Package

■ Features

• Repetitive Reverse Voltage : V_RRM= 1200V

• Low Forward Voltage Drop : V_F(typ.) = 1.6V

• Average Forward Current : I_F(AV.) = 100A @ Tc = 100℃

• Ultra-Fast Reverse Recovery Time : t_rr(typ.) = 180 ns

• Extensive Characterization of Recovery Parameters

• Reduced EMI and RFI

• Isolation Type Package

■ Applications

• Welding Machine

• Induction Heating

• UPS

■ Absolute Maximum Ratings @ Tc=25℃(Per Leg)

Symbol

Parameter

Conditions

Ratings

Unit

1200

960

200

100

V_RRM

Repetitive Peak Reverse Voltage

Reverse DC Voltage

V_R(DC)

T_C= 25℃

T_C= 100℃

Average Forward Current

Resistive Load

I_F(AV)

One Half Cycle at 60Hz,

Peak Value

(1)

1400

I_FSM

Surge(non-repetitive) Forward Current

I²t for Fusing

Value for One Cycle Current,

t_w= 8.3ms, T_j= 25℃ Start

8.13*10³

A²s

I²

T_J⁽²⁾

T_stg

V_isol

P_d

℃

Junction Temperature

Storage Temperature

-40 ~ 125

2500

Isolation Voltage

@ AC 1 minutes

337

Maximum Power Dissipation

Mounting screw torque

Mounting terminals screw torque

1.45

N.m

1.45

(Note *1) Repetitive rating : Pulse width limited by max junction temperature

(Note *2) The maximum junction temperature of chip is 150℃

H1.03

12 3 4

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