Datasheet > ESQ100QN60SN

ESQ100QN60SN

更新时间： 2024-06-27 12:13:07

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
5页	2637K
描述
4FM

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中文翻译

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数据手册

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ESQ100QN60SN 数据手册

Mar 2020

ESQ100QN60SN

Ultra-Fast Reverse Recovery Diode Module

Feature

 Repetitive Reverse Voltage : VRRM=600V

 Low Forward Voltage : V_F(max) = 2.3V

 Average Forward Current : I_F(Av.)=100A @TC=100℃

 Ultra-Fast Reverse Recovery Time : trr(typ.) =75ns

 Extensive Characterization of Recovery Parameters

 Reduced EMI and RFI

 Isolation Type Package

Applications

 High Speed & High Power converters, Welders

 Various Switching and Telecommunication Power Supply

Absolute Maximum Ratings @Tc = 125℃ (Per Leg)

Symbol

Parameter

Conditions

VRRM tp=10ms

Ratings Unit

V_RRM

Repetitive Peak Reverse Voltage

600

100

0.92

V_RSM=V_DRM&V_RRM+200V

Single-phase full wave rectifying

circuit, TC=100°C

I_O

DC output current

Surge(non-repetitive) Forward

Current

I_FSM

10ms half sine wave V_R=0.6V_RRM

I²

I2t for Fusing coordination

4.2*10³

0.8

A²s

V_FO

r_F

Threshold voltage

Forward slop resistance

Junction Temperatur

4.0

T_j

-40~150

-40~125

2500

5.0

℃

T_stg

Storage Temperatur

Isolation Voltag

Mounting Torqu

Terminal Torqu

Weigh

Visol

@ AC 1minute

N.m

5.0

Typical Including Screw

175

H1.01

12 3 4 5

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