Datasheet > ESDZL5-1F4

ESDZL5-1F4

更新时间： 2023-12-20 18:45:01

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	428K
描述
低钳位、低电容单向单线ESD保护

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中文翻译

获取价格

数据手册

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ESDZL5-1F4 数据手册

ESDZL5-1F4

Characteristics

1.1

Characteristics (curves)

Figure 3: Leakage current versus junction

temperature (typical values)

Figure 4: Junction capacitance versus reverse

voltage applied (typical values)

C(pF)

Ir(nA)

100

125

150

T (°C)

V (V)

Figure 6: ESD response to IEC 61000-4-2

(-8 kV contact discharge)

Figure 5: ESD response to IEC 61000-4-2

(+8 kV contact discharge)

10V/div

54 V

Peak clamping voltage

Clamping voltage at 30 ns

Clamping voltage at 60 ns

Clamping voltage at 100 ns

-1 V

-3 V

-28 V

9.5 V

9 V

6 V

Peak clamping voltage

Clamping voltage at 30 ns

Clamping voltage at 60 ns

Clamping voltage at 100 ns

20 ns/div

Figure 7: TLP characteristic

Figure 8: S21 attenuation measurement result

(dB)

I(A)

-5

-10

-15

-20

-4

-2

V(V)

F(Hz)

DocID030259 Rev 3

3/9

1 234 5 6 7...9

中文翻译

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