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ES8D

更新时间: 2024-11-27 12:56:31
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 438K
描述
8.0 Ampere Surface Mount Super Fast Recovery Rectifiers

ES8D 数据手册

 浏览型号ES8D的Datasheet PDF文件第2页 
ES8D thru ES8J  
®
ES8D thru ES8J  
Pb Free Plating Product  
8.0 Ampere Surface Mount Super Fast Recovery Rectifiers  
Unit: inch ( mm )  
SMC / DO-214AB  
Features  
Special for Automotive LED/HID lamp  
For surface mounted application  
Low profile package  
Built-in strain relief  
Ideal for automated placement  
Easy pick and place  
Superfast recovery time for high efficiency  
Glass passivated chip junction  
High temperature soldering:  
O
.280 (7.11)  
.260 (6.60)  
260 C/10 seconds at terminals  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
.012 (.305)  
.006 (.152)  
Mechanical Data  
Cases: Molded plastic  
.050 (1.27)  
.030 (0.76)  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Packing: 12mm tape per EIA STD RS-481  
Weight: 0.093 gram  
.008(.203)  
.002(.051)  
.320 (8.13)  
.305 (7.75)  
Maximum Ratings and Electrical Characteristics  
O
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Units  
Symbol  
Type Number  
ES8D  
200  
ES8G  
400  
ES8G  
600  
Maximum Recurrent Peak Reverse  
Voltage  
VRRM  
V
Maximum RMS Voltage  
280  
400  
420  
600  
V
V
140  
200  
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current See Fig. 1  
8.0  
125  
1.3  
A
A
V
I(AV)  
IFSM  
VF  
Peak Forward Surge Current, 8.3 ms  
Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method )  
Maximum Instantaneous Forward Voltage  
@ 8.0A  
0.98  
1.7  
Maximum DC Reverse Current  
o
10  
uA  
uA  
@TA =25 C at Rated DC Blocking Voltage  
o
IR  
350  
@ TA=100 C  
Maximum Reverse Recovery Time  
( Note 1 )  
Trr  
35  
nS  
pF  
Typical Junction Capacitance ( Note 2 )  
Cj  
45  
30  
Maximum Thermal Resistance (Note 3)  
RθJA  
75  
20  
o
C/W  
R
θJL  
o
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +150  
-55 to +150  
C
o
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
Notes:  
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas  
Page 1/2  
http://www.thinkisemi.com/  
Rev.02  
© 2006 Thinki Semiconductor Co.,Ltd.  

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