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ES3G PDF预览

ES3G

更新时间: 2024-01-22 22:07:06
品牌 Logo 应用领域
TSC 二极管光电二极管IOT超快速恢复二极管
页数 文件大小 规格书
2页 52K
描述
3.0 AMPS. Super Fast Surface Mount Rectifiers

ES3G 技术参数

生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:compliant风险等级:5.57
Is Samacsys:N应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:1000 V最大反向电流:10 µA
最大反向恢复时间:0.035 µs表面贴装:YES
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

ES3G 数据手册

 浏览型号ES3G的Datasheet PDF文件第2页 
ES3A THRU ES3J  
3.0 AMPS. Super Fast Surface Mount Rectifiers  
Voltage Range  
50 to 600 Volts  
Current  
3.0 Amperes  
SMC/DO-214AB  
Features  
Glass passivated junction chip  
For surface mounted applications  
Low profile package  
Built-in strain relief  
Ideal for automated placement  
Easy pick and place  
Superfast recovery time for high efficiency  
Glass passivated chip junction  
High temperature soldering:  
260OC/10 seconds at terminals  
Plastic material used carries Underwriters  
Laboratory Classification 94V-O  
.129(3.27)  
.118(3.0)  
.245(6.22)  
.220(5.59)  
.280(7.11)  
.260(6.60)  
.012(.31)  
.006(.15)  
.103(2.62)  
.079(2.00)  
Mechanical Data  
.008(.20)  
.004(.10)  
.060(1.52)  
.030(0.76)  
Cases: Molded plastic  
Terminals: Solder plated  
Polarity: Indicated by cathode band  
Packaging: 16mm tape per EIA STD RS-481  
Weight: 0.21 gram  
.320(8.13)  
.305(7.75)  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol ES ES ES ES ES ES ES ES  
Type Number  
Units  
3A 3B 3C 3D 3F 3G 3H 3J  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50 100 150 200 300 400 500 600  
V
V
V
35  
70 105 140 210 280 350 420  
Maximum DC Blocking Voltage  
50 100 150 200 300 400 500 600  
Maximum Average Forward Rectified Current  
See Fig. 1  
I(AV)  
3.0  
A
A
V
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method ) @TL = 100  
IFSM  
100  
Maximum Instantaneous Forward Voltage  
@ 3.0A  
VF  
IR  
0.95  
45  
1.3  
1.7  
Maximum DC Reverse Current @ TA =25℃  
at Rated DC Blocking Voltage @ TA=100℃  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
10  
500  
35  
uA  
uA  
nS  
pF  
Trr  
Cj  
RθJA  
RθJL  
TJ  
30  
47  
12  
/W  
Operating Temperature Range  
Storage Temperature Range  
-55 to +150  
-55 to + 150  
TSTG  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
3. Units Mounted on P.C.B. with 0.6 x 0.6”(16 x 16mm) Copper Pad Areas  
- 218 -  

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