Datasheet > ES29DS800E-90RTG

ES29DS800E-90RTG

更新时间： 2024-11-29 04:55:19

品牌	Logo	应用领域
EXCELSEMI		闪存
页数	文件大小	规格书
50页	680K
描述
8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

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ES29DS800E-90RTG 数据手册

E S I

Excel Semiconductor inc.

ES29LV800D

8Mbit(1M x 8/512K x 16)

CMOS 3.0 Volt-only, Boot Sector Flash Memory

• Minimum 100,000 program/erase cycles per sector

• 20 Year data retention at 125^oC

GENERAL FEATURES

• Single power supply operation

- 2.7V -3.6V for read, program and erase operations

SOFTWARE FEATURES

• Sector Structure

- 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors

- 64Kbyte x 15sectors

• Erase Suspend / Erase Resume

• Data# poll and toggle for Program/erase status

• Unlock Bypass program

• Autoselect mode

• Auto-sleep mode after t_ACC+ 30ns

• Top or Bottom boot block

- ES29LV800DT for Top boot block device

- ES29LV800DB for Bottom boot block device

• Package Options

- 48-pin TSOP

HARDWARE FEATURES

- 48-ball FBGA ( 6 x 8 mm )

- Pb-free packages

- All Pb-free products are RoHS-Compliant

• Hardware reset input pin ( RESET#)

- Provides a hardware reset to device

- Any internal device operation is terminated and the

device returns to read mode by the reset

• Low Vcc write inhibit

• Manufactured on 0.18um process technology

• Compatible with JEDEC standards

- Pinout and software compatible with single-power

supply flash standard

• Ready/Busy# output pin ( RY/BY#)

- Provides a program or erase operational status

about whether it is finished for read or still being

progressed

• Sector protection / unprotection ( RESET# , A9 )

- Hardware method of locking a sector to prevent

any program or erase operation within that sector

- Two methods are provided :

DEVICE PERFORMANCE

• Read access time

- 70ns / 90ns / 120ns

- In-system method by RESET# pin

- A9 high-voltage method for PROM programmers

• Program and erase time

- Program time : 6us/byte, 8us/word ( typical )

- Sector erase time : 0.7sec/sector ( typical )

• Temporary Sector Unprotection ( RESET# )

- Allows temporary unprotection of previously

protected sectors to change data in-system

• Power consumption (typical values)

- 200nA in standby or automatic sleep mode

- 7mA active read current at 5 MHz

- 15mA active write current during program or erase

Rev. 1D January 5, 2006

ES29LV800D

12 3 4 5 6 7...50

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与ES29DS800E-90RTG相关器件

型号	品牌	获取价格	描述	数据表
ES29DS800EB-12TG	EXCELSEMI	获取价格	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800ET-70WC	EXCELSEMI	获取价格	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800ET-90RTGI	EXCELSEMI	获取价格	4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800ET-90TGI	EXCELSEMI	获取价格	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800F-12RTG	EXCELSEMI	获取价格	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800F-70RTG	EXCELSEMI	获取价格	4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800F-70WCI	EXCELSEMI	获取价格	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800FB-12RTG	EXCELSEMI	获取价格	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800FB-12TG	EXCELSEMI	获取价格	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
ES29DS800FB-70WCI	EXCELSEMI	获取价格	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

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