Datasheet > EPA018B

EPA018B

更新时间： 2024-02-06 14:45:32

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
3页	96K
描述
High Efficiency Heterojunction Power FET

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技术参数
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EPA018B 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EPA018B 数据手册

EPA018B

ISSUED 11/01/2007

High Efficiency Heterojunction Power FET

FEATURES

•

VERY HIGH fmax: 120GHz

+20.0dBm TYPICAL OUTPUT POWER

13.0dB TYPICAL POWER GAIN AT 18 GHz

TYPICAL 0.75dB NOISE FIGURE AND 12.5dB

ASSOCIATED GAIN AT 12GHz

•

0.3 X 180 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

Idss SORTED IN 5 mA PER BIN RANGE

Chip Thickness: 75 ± 13 micron

All Dimensions in Microns

•

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

PARAMETERS/TEST CONDITIONS¹

MIN TYP MAX UNITS

Output Power at 1dB Compression

f = 12GHz

f = 18GHz

18.0 20.0*

P_1dB

dBm

V_DS= 6 V, I_DS≈ 50% Idss

20.0*

Gain at 1dB Compression

f =12GHz

f = 18GHz

13.0 14.5

13.0

G_1dB

V_DS= 6 V, I_DS≈ 50% Idss

PAE

Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss f=12Ghz

Noise Figure, f = 12GHz

V_DS= 2 V, I_DS≈ 15 mA

Associated Gain, f = 12GHz

0.75

12.5

V_DS= 2 V, I_DS≈ 15 mA

I_DSS

G_M

Saturated Drain Current

Transconductance

V_DS=3 V, V_GS= 0 V

V_P

Pinch-off Voltage

V_DS= 3 V, I_DS= 1.0 mA

-1.0

-15

-14

185

-2.5

BV_GD

BV_GS

R_TH

Drain Breakdown Voltage

Source Breakdown Voltage

I_GD= 0.5mA

I_GS= 0.5mA

-9

-7

^oC/W

Thermal Resistance (Au-Sn Eutectic Attach)

*P1dB = 21.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection.

MAXIMUM RATINGS AT 25°C

SYMBOL

Vds

V_GS

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

6 V

- 3 V

-8V

Ids

Idss

I_GSF

Forward Gate Current

Input Power

9mA

1.5 mA

P_IN

16dBm

175°C

-65/175°C

740mW

@ 3dB compression

150°C

T_CH

Channel Temperature

Storage Temperature

Total Power Dissipation

T_STG

P_T

-65/150°C

625mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 3

Revised November 2007

12 3

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