生命周期: | Transferred | 包装说明: | R-PDSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.83 |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-PDSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -40 °C |
最大输出电流: | 0.48 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 100 V |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | GULL WING | 端子位置: | DUAL |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
EP05H10TE8R3 | NIEC | Rectifier Diode, Schottky, 1 Element, 0.48A, 100V V(RRM), Silicon, |
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EP05H10TRLH | NIEC | Rectifier Diode, Schottky, 1 Element, 0.5A, 100V V(RRM), Silicon, SOD-123, 2 PIN |
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EP05Q03L | KYOCERA AVX | Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b |
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EP05Q03LTE8L10 | NIEC | Rectifier Diode, Schottky, 1 Element, 0.49A, 30V V(RRM), Silicon, |
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EP05Q03LTE8L3 | NIEC | Rectifier Diode, Schottky, 1 Element, 0.49A, 30V V(RRM), Silicon, |
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EP05Q03LTE8R10 | NIEC | Rectifier Diode, Schottky, 1 Element, 0.49A, 30V V(RRM), Silicon, |
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