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EP05H10TRLH PDF预览

EP05H10TRLH

更新时间: 2024-11-26 13:07:39
品牌 Logo 应用领域
NIEC 二极管光电二极管
页数 文件大小 规格书
2页 31K
描述
Rectifier Diode, Schottky, 1 Element, 0.5A, 100V V(RRM), Silicon, SOD-123, 2 PIN

EP05H10TRLH 数据手册

 浏览型号EP05H10TRLH的Datasheet PDF文件第2页 
SBD  
T y p e : EP05H10  
OUTLINE DRAWING  
FEATURES  
* JEDEC SOD-123 Package  
* Very Low profile 1.1mm Max  
* Low Forward Voltage Drop  
* Low Power Loss,High Efficiency  
* High Surge Capability  
* Low Thermal Resistance  
* Packaged in 8mm Tape and Reel  
Maximum Ratings  
Approx Net Weight:0.011g  
Rating  
Symbol  
VRRM  
EP05H10  
60  
Unit  
V
Repetitive Peak Reverse Voltage  
0.48 Ta=25°C  
0.50 Tl=118°C  
1
50Hz Half Sine Wave,  
Resistive Load  
0.785  
Average Rectified Output Current  
RMS Forward Current  
IO  
A
A
A
IF(RMS)  
IFSM  
50Hz Half Sine Wave,1cycle  
Non-repetitive  
Surge Forward Current  
8
Operating JunctionTemperature Range  
Storage Temperature Range  
Tjw  
Tstg  
-40 to +150  
-40 to +150  
°C  
°C  
Electrical Thermal Characteristics  
Characteristics  
Symbol  
Conditions  
Min. Typ. Max.  
Unit  
Peak Reverse Current  
Peak Forward Voltage  
IRM  
VFM  
-
-
-
-
-
-
-
-
50  
0.8  
300  
70  
Tj= 25°C, VRM= VRRM  
Tj= 25°C, IFM=0.5A  
µA  
V
Rth(j-a) Junction to Ambient *  
Rth(j-l) Junction to Lead  
Thermal Resistance  
°C /W  
*1: Glass Epoxy Substrate Mounted (Soldering Lands=1x1mm,Both Sides)  
(Tl: Lead Temperature)  

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