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EFC240B-180F PDF预览

EFC240B-180F

更新时间: 2024-02-12 07:17:07
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
1页 87K
描述
Low Distortion GaAs Power FET

EFC240B-180F 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

EFC240B-180F 数据手册

  
EFC240B-180F  
ISSUED 10/04/2006  
Low Distortion GaAs Power FET  
FEATURES  
NON-HERMETIC 180MIL METAL FLANGE PACKAGE  
+31.0 dBm TYPICAL OUTPUT POWER  
16.5 dB TYPICAL POWER GAIN AT 2GHz  
0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
Caution! ESD sensitive device.  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
SYMBOL  
PARAMETERS/TEST CONDITIONS1  
MIN  
29.0  
TYP  
31.0  
31.0  
16.5  
11.5  
MAX  
UNITS  
Output Power at 1dB Compression  
VDS = 10 V, IDS 50% IDSS  
f = 2GHz  
f = 4GHz  
P1dB  
dBm  
15.0  
Gain at 1dB Compression  
VDS = 10 V, IDS 50% IDSS  
Power Added Efficiency at 1dB Compression  
VDS = 10 V, IDS 50% IDSS  
f = 2GHz  
f = 4GHz  
G1dB  
PAE  
dB  
%
40  
f = 2GHz  
VDS = 3 V, VGS = 0 V  
DS = 3 V, VGS = 0 V  
VDS = 3 V, IDS = 6 mA  
IDSS  
GM  
Saturated Drain Current  
320  
200  
520  
280  
-2.5  
-20  
-17  
22*  
720  
-4.0  
mA  
mS  
V
Transconductance  
V
VP  
Pinch-off Voltage  
BVGD  
BVGS  
Rth  
Drain Breakdown Voltage  
Source Breakdown Voltage  
Thermal Resistance  
I
GD = 2.4 mA  
GS = 2.4 mA  
-18  
-10  
V
I
V
oC/W  
* Overall Rth depends on case mounting.  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
VDS  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Forward Gate Current  
Reverse Gate Current  
Input Power  
ABSOLUTE1  
CONTINUOUS2  
10V  
15V  
5V  
VGS  
-4.5V  
Igf  
10.8mA  
-1.8mA  
29dBm  
175oC  
-65/175oC  
6W  
3.6mA  
Igr  
-0.6mA  
Pin  
@ 3dB Compression  
Tch  
Tstg  
Pt  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
175oC  
-65/175oC  
6W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 1  
Revised October 2006  

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