EFC240B-180F
ISSUED 10/04/2006
Low Distortion GaAs Power FET
FEATURES
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NON-HERMETIC 180MIL METAL FLANGE PACKAGE
+31.0 dBm TYPICAL OUTPUT POWER
16.5 dB TYPICAL POWER GAIN AT 2GHz
0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN
29.0
TYP
31.0
31.0
16.5
11.5
MAX
UNITS
Output Power at 1dB Compression
VDS = 10 V, IDS ≈ 50% IDSS
f = 2GHz
f = 4GHz
P1dB
dBm
15.0
Gain at 1dB Compression
VDS = 10 V, IDS ≈ 50% IDSS
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDS ≈ 50% IDSS
f = 2GHz
f = 4GHz
G1dB
PAE
dB
%
40
f = 2GHz
VDS = 3 V, VGS = 0 V
DS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 6 mA
IDSS
GM
Saturated Drain Current
320
200
520
280
-2.5
-20
-17
22*
720
-4.0
mA
mS
V
Transconductance
V
VP
Pinch-off Voltage
BVGD
BVGS
Rth
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
I
GD = 2.4 mA
GS = 2.4 mA
-18
-10
V
I
V
oC/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
VDS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
ABSOLUTE1
CONTINUOUS2
10V
15V
5V
VGS
-4.5V
Igf
10.8mA
-1.8mA
29dBm
175oC
-65/175oC
6W
3.6mA
Igr
-0.6mA
Pin
@ 3dB Compression
Tch
Tstg
Pt
Channel Temperature
Storage Temperature
Total Power Dissipation
175oC
-65/175oC
6W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised October 2006