TRANSISTORS
EB102H
●FEATURES:①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
●APPLICATION:①FLUORESCENT LAMP ②ELECTRONIC BALLAST
●Absolute Maximum Ratings (Tc=25℃)
TO-92 NPN
PARAMETER
Collector–Base Voltage
Collector–Emitter Voltage
Emitter –Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
600
UNIT
V
400
V
9
V
0.8
A
Total Power Dissipation
Junction Temperature
Storage Temperature
PC
10
W
150
Tj
℃
℃
-65-150
Tstg
● Electronic Characteristics (Tc=25℃)
CHARACTERISTICS
Collector–Base Cutoff Current
Collector–Emitter Cutoff Current
Collector–Emitter Voltage
Emitter –Base Voltage
SYMBOL
ICBO
TEST CONDITION
VCB=600v
MIN
MAX UNIT
100
250
µA
µA
V
ICEO
VCE=400v
VCEO
IC=10mA IB=0
IE=1mA IC=0
IC=0.1A IB=10mA
IC=0.5A IB=0.1A
IC=0.1A IB=10mA
VCE=5v IC=1mA
VCE=10v IC=0.1A
VCE=5v IC=0.8A
VCC=5V
400
9
VEBO
V
Collector–Emitter Saturation
Voltage
Vcesat
0.4
0.8
1.0
V
V
Base–Emitter Saturation Voltage
Vbesat
HFE
V
7
10
5
DC Current Gain
40
Storage Time
Falling Time
Ts
2.5
4.5
0.9
µS
µS
IC=0.1A
Tf
●CLASSIFICATION OF HFE AND TS
10-15
15-20
3.0-3.5
20-25
25-30
HFE
TS
2.5-3.0
3.5-4.0
4.0-4.5
1/3
Jet li Mobile:+-86-13537087568 E-mail:li.jet8@qq.com