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EB102H PDF预览

EB102H

更新时间: 2022-03-20 10:56:27
品牌 Logo 应用领域
JBCAPACITORS /
页数 文件大小 规格书
3页 248K
描述
TO-92 1.18Mil Transistors

EB102H 数据手册

 浏览型号EB102H的Datasheet PDF文件第2页浏览型号EB102H的Datasheet PDF文件第3页 
TRANSISTORS  
EB102H  
FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA  
APPLICATIONFLUORESCENT LAMP ELECTRONIC BALLAST  
Absolute Maximum Ratings (Tc=25)  
TO-92 NPN  
PARAMETER  
CollectorBase Voltage  
CollectorEmitter Voltage  
Emitter Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
600  
UNIT  
V
400  
V
9
V
0.8  
A
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PC  
10  
W
150  
Tj  
-65-150  
Tstg  
Electronic Characteristics (Tc=25)  
CHARACTERISTICS  
CollectorBase Cutoff Current  
CollectorEmitter Cutoff Current  
CollectorEmitter Voltage  
Emitter Base Voltage  
SYMBOL  
ICBO  
TEST CONDITION  
VCB=600v  
MIN  
MAX UNIT  
100  
250  
µA  
µA  
V
ICEO  
VCE=400v  
VCEO  
IC=10mA IB=0  
IE=1mA IC=0  
IC=0.1A IB=10mA  
IC=0.5A IB=0.1A  
IC=0.1A IB=10mA  
VCE=5v IC=1mA  
VCE=10v IC=0.1A  
VCE=5v IC=0.8A  
VCC=5V  
400  
9
VEBO  
V
CollectorEmitter Saturation  
Voltage  
Vcesat  
0.4  
0.8  
1.0  
V
V
BaseEmitter Saturation Voltage  
Vbesat  
HFE  
V
7
10  
5
DC Current Gain  
40  
Storage Time  
Falling Time  
Ts  
2.5  
4.5  
0.9  
µS  
µS  
IC=0.1A  
Tf  
CLASSIFICATION OF HFE AND TS  
10-15  
15-20  
3.0-3.5  
20-25  
25-30  
HFE  
TS  
2.5-3.0  
3.5-4.0  
4.0-4.5  
1/3  
Jet li Mobile:+-86-13537087568 E-mail:li.jet8@qq.com  

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