Datasheet > DXTN10060DFJBWQ

DXTN10060DFJBWQ

更新时间： 2023-12-06 20:11:31

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	435K
描述
NPN, 60V, 4A, DFN2020-3 (SWP)

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DXTN10060DFJBWQ 数据手册

DXTN10060DFJBWQ

Absolute Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_CM

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

100

(Note 5)

(Note 6)

4.3

Continuous Collector Current

Base Current

I_C

I_B

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

1.8

2.94

19.6

Unit

(Note 5)

(Note 6)

Power Dissipation

Linear Derating Factor

mW/°C

P_D

(Note 5)

(Note 6)

(Note 7)

Thermal Resistance, Junction to Ambient

R_

16.8

°C/W

Thermal Resistance, Junction to Lead

R_

Operating and Storage Temperature Range

-55 to +175

°C

T_J,T_STG

ESD Ratings (Note 8)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

4,000

400

Unit

JEDEC Class

Notes:

5. For a device mounted with the exposed collector pad on 31mm x 31mm (10cm²) 1oz copper that is on a single sided 1.6mm FR-4 PCB; device is

measured under still air conditions whilst operating in a steady-state. The entire exposed collector pad is attached to the heatsink.

6. Same as Note 5, except the device is measured at t ≤ 5 sec.

7. Thermal resistance from junction to solder-point (on the exposed collector pad).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

2 of 7

www.diodes.com

September 2019

DXTN10060DFJBWQ

Document Number DS41729 Rev. 1 - 2

123 4 5 6 7

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