Datasheet > DSC10C065D1

DSC10C065D1

更新时间： 2023-12-06 20:10:48

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描述
10A Silicon Carbide Schottky Diode

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中文翻译

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数据手册

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DSC10C065D1 数据手册

DSC10C065D1

Marking Information

= Manufacturer’s Marking

DSC10C065 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 23 = 2023)

WW = Week (01 to 53)

AB = Fab and Assembly Code

DSC10C065

Maximum Ratings (@T_C= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

DC Blocking Voltage

V_RRM

V_DC

650

Average Rectified Output Current

I_O

Non-Repetitive Peak Forward Surge Current 10ms Half-Sine Wave Form

I_FSM

Thermal Characteristics

Characteristic

Symbol

R_JC

Value

Unit

°C/W

Typical Thermal Resistance, Junction to Case (Notes 5, 6, 7)

Typical Thermal Resistance, Junction to Lead (Notes 5, 6, 7)

Operating and Storage Temperature Range

R_JL

-55 to +175

°C

T_J, T_STG

Notes:

5. Thermal resistance test performed in accordance with JESD-51.

6. With aluminum fin heatsink–100mm×42mm×26mm.

7. Device mounted on 1inch²copper pad, 2oz. The heat generated must be less than the thermal conductivity from junction to case: dP_D/dT_J< 1/R_θJCor

junction to ambient: dP_D/dT_J< 1/R_θJA

Electrical Characteristics (@T_C= +25°C, unless otherwise specified.)

Characteristic

Reverse Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

650

—

V_BR

I_R= 0.1mA

—

1.41

1.80

1.7

2.5

I_F= 10A, T_J= +25°C

I_F= 10A, T_J= +175°C

Forward Voltage Drop

Leakage Current

V_F

I_R

—

1.2

133

230

—

V_R= 650V, T_J= +25°C

V_R= 650V, T_J= +175°C

µA

I_F= 10A, dI/dt = 200A/µs,

V_R= 400V, T_J= +25°C

Total Capacitive Charge

—

Q_C

V_R= 0.1V, T_J= +25°C, f = 1MHz

V_R= 1V, T_J= +25°C, f = 1MHz

V_R= 40V, T_J= +25°C, f = 1MHz

—

348

273

—

Total Capacitance

C_T

2 of 5

www.diodes.com

January 2023

DSC10C065D1

Document number: DS45172 Rev. 5 - 2

123 4 5

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