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DS1822Z+

更新时间： 2024-02-25 23:47:15
品牌 Logo 应用领域
美信 - MAXIM 传感器换能器温度传感器输出元件
页数 文件大小 规格书
21页 223K
描述
Econo 1-Wire Digital Thermometer

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DS1822Z+ 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOP8,.25
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：1.59Samacsys Description：Board Mount Temperature Sensors Econo 1-Wire Digital Thermometer
最大精度（摄氏度）：2 Cel其他特性：COMPLIANCE TO MIL-150
主体宽度：3.91 mm主体高度：1.55 mm
主体长度或直径：4.88 mm外壳：PLASTIC
JESD-609代码：e3安装特点：SURFACE MOUNT
位数：12端子数量：8
最大工作电流：1.5 mA最高工作温度：125 °C
最低工作温度：-55 °C输出接口类型：1-WIRE INTERFACE
封装主体材料：PLASTIC/EPOXY封装等效代码：SOP8,.25
封装形状/形式：RECTANGULAR电源：3.3/5 V
传感器/换能器类型：TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL子类别：Other Sensors/Transducers
最大供电电压：5.5 V最小供电电压：3 V
表面贴装：YES端子面层：Matte Tin (Sn)
端接类型：SOLDER

DS1822Z+ 数据手册

 浏览型号DS1822Z+的Datasheet PDF文件第4页浏览型号DS1822Z+的Datasheet PDF文件第5页浏览型号DS1822Z+的Datasheet PDF文件第6页浏览型号DS1822Z+的Datasheet PDF文件第8页浏览型号DS1822Z+的Datasheet PDF文件第9页浏览型号DS1822Z+的Datasheet PDF文件第10页 
DS1822  
MEMORY  
The DS1822’s memory is organized as shown in Figure 7. The memory consists of an SRAM scratchpad  
with NV EEPROM storage for the high and low alarm trigger registers (TH and TL) and configuration  
register. Note that if the DS1822 alarm function is not used, the TH and TL registers can serve as general-  
purpose memory. All memory commands are described in detail in the DS1822 FUNCTION  
COMMANDS section.  
Byte 0 and byte 1 of the scratchpad contain the LSB and the MSB of the temperature register,  
respectively. These bytes are read-only. Bytes 2 and 3 provide access to TH and TL registers. Byte 4  
contains the configuration register data, which is explained in detail in the CONFIGURATION  
REGISTER section of this data sheet. Bytes 5, 6, and 7 are reserved for internal use by the device and  
cannot be overwritten.  
Byte 8 of the scratchpad is read-only and contains the cyclic redundancy check (CRC) code for bytes 0  
through 7 of the scratchpad. The DS1822 generates this CRC using the method described in the CRC  
GENERATION section.  
Data is written to bytes 2, 3, and 4 of the scratchpad using the Write Scratchpad [4Eh] command; the data  
must be transmitted to the DS1822 starting with the least significant bit of byte 2. To verify data integrity,  
the scratchpad can be read (using the Read Scratchpad [BEh] command) after the data is written. When  
reading the scratchpad, data is transferred over the 1-Wire bus starting with the least significant bit of  
byte 0. To transfer the TH, TL and configuration data from the scratchpad to EEPROM, the master must  
issue the Copy Scratchpad [48h] command.  
Data in the EEPROM registers is retained when the device is powered down; at power-up the EEPROM  
data is reloaded into the corresponding scratchpad locations. Data can also be reloaded from EEPROM to  
the scratchpad at any time using the Recall E2 [B8h] command. The master can issue read time slots  
following the Recall E2 command and the DS1822 will indicate the status of the recall by transmitting 0  
while the recall is in progress and 1 when the recall is done.  
DS1822 MEMORY MAP Figure 7  
SCRATCHPAD (Power-up State)  
byte 0 Temperature LSB (50h)  
(85°C)  
byte 1 Temperature MSB (05h)  
byte 2 TH Register or User Byte 1*  
byte 3 TL Register or User Byte 2*  
byte 4 Configuration Register*  
byte 5 Reserved (FFh)  
EEPROM  
TH Register or User Byte 1  
TL Register or User Byte 2  
Configuration Register  
byte 6 Reserved  
byte 7 Reserved (10h)  
byte 8 CRC*  
*Power-up state depends on value(s) stored  
in EEPROM  
7 of 21  
1...45678910...21

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