Datasheet > DMT2004UPS

DMT2004UPS

更新时间： 2023-12-06 20:10:54

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	376K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMT2004UPS 数据手册

DMT2004UPS

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±12

V_GSS

Steady

State

T_C= +25°C

T_C= +70°C

Continuous Drain Current (Note 7) V_GS= 10V

I_D

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

Continuous Source-Drain Diode Current (Note 6)

Avalanche Current (Note 8) L = 0.1mH

160

I_DM

I_S

I_AS

Avalanche Energy (Note 8) L = 0.1mH

E_AS

Thermal Characteristics

Characteristic

Total Power Dissipation

Symbol

P_D

R_

Value

1.4

Units

T_A= +25°C

Steady State

T_A= +25°C

Steady State

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation

°C/W

P_D

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 7)

Operating and Storage Temperature Range

°C/W

°C

R_

2.5

R_

-55 to +150

T_J,T_STG

Electrical Characteristics (T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

µA

Zero Gate Voltage Drain Current (T_J= +25°C)

Gate-Source Leakage

V_DS= 20V, V_GS= 0V

V_GS= ±10V, V_DS= 0V

±100

I_GSS

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

0.55

—

3.7

4.5

7.5

0.65

1.45

5.0

mΩ

V_GS(TH)

RDS(ON)

V_SD

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 20A

V_GS= 4.5V, I_D= 20A

V_GS= 2.5V, I_D= 20A

V_GS= 0V, I_S= 2A

—

Static Drain-Source On-Resistance

6.5

—

10.0

1.0

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

—

1683

581

559

1.6

C_iss

C_oss

C_rss

R_G

V_DS= 15V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Ω

V_DS= 0V, V_GS= 0V, f = 1.0MHz

29.6

53.7

4.2

Total Gate Charge (V_GS= 4.5V)

Total Gate Charge (V_GS= 10V)

Gate-Source Charge

Q_g

V_DD= 15V, I_D= 9A

Q_gs

Q_gd

t_D(ON)

t_R

13.4

3.9

Gate-Drain Charge

Turn-On Delay Time

9.6

Turn-On Rise Time

V_DD= 15V, V_GS= 10V,

R_G= 3Ω, I_D= 9A

30.8

38.6

11.2

22.9

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_F= 1.5A, di/dt = 100A/μs

Q_RR

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. I_ASand E_ASrating are based on low frequency and duty cycles to keep T_J= +25°C .

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

PowerDI is a registered trademark of Diodes Incorporated.

2 of 7

www.diodes.com

July 2016

DMT2004UPS

Document number: DS38955 Rev. 1 - 2

123 4 5 6 7

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