Datasheet > DMG302PU

DMG302PU

更新时间： 2022-02-26 10:48:33

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	290K
描述
Low On-Resistance

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DMG302PU 数据手册

DMG302PU

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-25

Units

Gate-Source Voltage

-8

V_GSS

_A= +25°C

Steady

State

-0.17

-0.14

Continuous Drain Current (Note 6) V_GS= -4.5V

I_D

T_A= +70°C

T_A= +25°C

T_A= +70°C

Steady

State

-0.15

-0.12

Continuous Drain Current (Note 6) V_GS= -2.7V

I_D

-0.5

Pulsed Drain Current T_P≤ 300µs, Duty Cycle = 2%)

I_DM

Thermal Characteristics

Characteristic

Symbol

Value

Units

(Note 5)

(Note 6)

(Note 5)

(Note 6)

0.33

0.45

376

275

Total Power Dissipation

P_D

Thermal Resistance, Junction to Ambient

R_θJA

°C/W

°C

Thermal Resistance, Junction to Case

R_θJC

Operating and Storage Temperature Range

-55 to +150

_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Symbol

Min

Typ

Max

Unit

Test Condition

-25

⎯

BV_DSS

I_DSS

⎯

-1

V_GS= 0V, I_D= -250µA

V_DS= -20V, V_GS= 0V

V_GS= -8V, V_DS= 0V

µA

Gate-Source Leakage

-100

I_GSS

⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.65

⎯

-0.96

2.5

-1.5

V_GS(th)

V_DS= V_GS, I_D= -250µA

V_GS= -4.5V, I_D= -0.2A

V_GS= -2.7V, I_D= -0.05A

V_DS= -5V, I_D= -0.2A

V_GS= 0V, I_S= -0.2A

Static Drain-Source On-Resistance

R_DS(ON)

⎯

Forward Transfer Admittance

Diode Forward Voltage (Note 7)

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

189

⎯

|Y_fs|

V_SD

⎯

-1.5

⎯

27.2

6.1

C_iss

C_oss

C_rss

Q_g

⎯

V_DS= -10V, V_GS= 0V

f = 1.0MHz

Output Capacitance

1.7

Reverse Transfer Capacitance

Total Gate Charge

0.35

0.08

0.06

4.5

_DS= -5V, I_D= -0.2A,

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

t_d(on)

t_r

V_GS= -4.5V,

Turn-On Delay Time

Rise Time

2.3

_GS= -4.5V, V_DD= -6V

_D= -0.2A, R_G= 50Ω

Turn-Off Delay Time

Fall Time

24.1

11.0

t_d(off)

t_f

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

2 of 6

www.diodes.com

May 2014

DMG302PU

Document number: DS36227 Rev. 2 - 2

123 4 5 6

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