5秒后页面跳转
DGD2103M PDF预览

DGD2103M

更新时间: 2023-12-06 20:11:44
品牌 Logo 应用领域
美台 - DIODES 栅极驱动
页数 文件大小 规格书
11页 892K
描述
HALF-BRIDGE GATE DRIVER IN SO-8

DGD2103M 数据手册

 浏览型号DGD2103M的Datasheet PDF文件第1页浏览型号DGD2103M的Datasheet PDF文件第2页浏览型号DGD2103M的Datasheet PDF文件第3页浏览型号DGD2103M的Datasheet PDF文件第5页浏览型号DGD2103M的Datasheet PDF文件第6页浏览型号DGD2103M的Datasheet PDF文件第7页 
DGD2103M  
DC Electrical Characteristics (VBIAS (VCC, VBS) = 15V, @TA = +25°C, unless otherwise specified.) (Note 7)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Condition  
2.5  
0.8  
0.2  
0.1  
50  
V
V
Logic “1” (HIN) & Logic “0” (LIN*) Input Voltage  
Logic “0” (HIN) & Logic “1” (LIN*) Input Voltage  
High Level Output Voltage, VBIAS - VO  
Low Level Output Voltage, VO  
VIH  
VIL  
VCC = 10V to 20V  
VCC = 10V to 20V  
IO = 2mA  
0.05  
0.02  
V
VOH  
VOL  
V
IO = 2mA  
µA  
µA  
µA  
µA  
µA  
V
Offset Supply Leakage Current  
ILK  
VB = VS = 600V  
VIN = 0V or 5V  
VIN = 0V or 5V  
HIN = 5V, LIN* = 0V  
HIN = 0V, LIN* = 5V  
60  
100  
500  
10  
Quiescent VBS Supply Current  
IBSQ  
ICCQ  
IIN+  
350  
3
Quiescent VCC Supply Current  
Logic “1” Input Bias Current  
5
Logic “0” Input Bias Current  
IIN-  
8.0  
7.4  
4.5  
4.2  
130  
270  
8.9  
8.2  
5.5  
5.2  
290  
600  
9.8  
9.0  
6.5  
6.2  
VCC Supply Undervoltage Positive Going Threshold  
VCC Supply Undervoltage Negative Going Threshold  
VBS Supply Undervoltage Positive Going Threshold  
VBS Supply Undervoltage Negative Going Threshold  
Output High Short Circuit Pulsed Current  
Output Low Short Circuit Pulsed Current  
VCCUV+  
VCCUV-  
VBSUV+  
VBSUV-  
IO+  
V
V
V
mA  
mA  
VO = 0V, PW 10µs  
VO = 15V, PW 10µs  
IO-  
Notes:  
7. The VIN and IIN parameters are applicable to the two logic pins: HIN and LIN*. The VO and IO parameters are applicable to the respective output pins: HO  
and LO.  
AC Electrical Characteristics (VBIAS (VCC, VBS) = 15V, CL = 1000pF, @TA = +25°C, unless otherwise specified.)  
Parameter  
Turn-On Propagation Delay  
Symbol  
tON  
Min  
Typ  
680  
150  
Max  
820  
220  
60  
Unit  
ns  
Condition  
VS = 0V  
ns  
Turn-Off Propagation Delay  
Delay Matching, HO & LO Turn-On / Turn-Off  
Turn-On Rise Time  
tOFF  
tDM  
tR  
VS = 600V  
ns  
70  
170  
90  
ns  
VS = 0V  
VS = 0V  
35  
ns  
Turn-Off Fall Time  
tF  
300  
420  
650  
ns  
Deadtime: tDT LO-HO & tDT HO-LO  
tDT  
4 of 11  
www.diodes.com  
January 2021  
© Diodes Incorporated  
DGD2103M  
Document Number DS39296 Rev. 4 - 2  

与DGD2103M相关器件

型号 品牌 获取价格 描述 数据表
DGD2103MS8-13 DIODES

获取价格

MOSFET Driver,
DGD21042S8-13 DIODES

获取价格

Half Bridge Based Peripheral Driver,
DGD2104M DIODES

获取价格

HALF-BRIDGE GATE DRIVER IN SO-8
DGD21064M DIODES

获取价格

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14
DGD2106M DIODES

获取价格

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8
DGD21084 DIODES

获取价格

HALF BRIDGE GATE DRIVER IN SO-14
DGD21084S14-13 DIODES

获取价格

HALF BRIDGE GATE DRIVER IN SO-14
DGD2110 DIODES

获取价格

HIGH-SIDE AND LOW-SIDE GATE DRIVERS IN SO-16 (TYPE TH)
DGD2110S16-13 DIODES

获取价格

Half Bridge Based MOSFET Driver,
DGD2111 DIODES

获取价格

HIGH-SIDE AND LOW-SIDE GATE DRIVERS IN SO-16 (TYPE TH)