Datasheet > DG15NA60

DG15NA60

更新时间： 2024-03-03 10:09:12

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	239K
描述
3GBJ

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数据手册

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DG15NA60 数据手册

DG15NA60 THRU DG15NA120

（T =25℃Unless otherwise specified）

■Electrical Characteristics

DG15NA60

DG15NA80

DG15NA100

DG15NA120

PARAMETER

SYMBOL

UNIT TEST CONDITIONS

Maximum instantaneous

forward voltage drop per diode

1.0

=7.5A

T =25℃

Maximum DC reverse current

at rated DC blocking voltage

per diode

μA

200

T =125℃

Measured at 1MHz

Typical junction capacitance

pF and Applied Reverse

Voltage of 4.0 V.D.C

140

Thermal Characteristics （T =25℃Unless otherwise specified）

■

DG15NA60

DG15NA80

DG15NA100

DG15NA120

PARAMETER

SYMBOL

UNIT

Between junction and ambient,

Without heatsink

θJ-A

Typical

Thermal

Resistance

℃/W

Between junction and case,

With heatsink

θJ-C

0.5

Note: Device mounted on 75mm x 45mm x 5.5mm Aluminum Plate Heatsink.

Ordering Information (Example)

■

PACKING

MINIIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

UNIT WEIGHT(g)

DELIVERY MODE

BOX

CODE

Approximate 10

100

1000

DG15NA60 ~ DG15NA120

TUBE

Characteristics (Typical)

■

FIG2:Surge Forward Current Capability

FIG1:Io-Tc Curve

525

350

175

heatsink

Tc-sensing point

half sine wave

8.3ms 8.3ms

1cycle

non-repetitive

Tj=25℃

with heatsink

without heatsink

120

100 110

130 140 150 160

170

100

Case Temperature(℃)

Number of Cycles

2 / 4

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-B3108

Rev.1.0,25-Jul-23

www.21yangjie.com

123 4

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