生命周期: | Contact Manufacturer | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.74 | 配置: | BRIDGE, 6 ELEMENTS |
二极管类型: | BRIDGE RECTIFIER DIODE | 最大正向电压 (VF): | 1.2 V |
最大非重复峰值正向电流: | 2000 A | 元件数量: | 6 |
最高工作温度: | 150 °C | 最大输出电流: | 200 A |
最大重复峰值反向电压: | 800 V | 子类别: | Bridge Rectifier Diodes |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
DF200R07W2H3_B77 | INFINEON | PressFIT |
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DF200R12KE3 | INFINEON | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 |
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DF200R12KE3HOSA1 | INFINEON | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 |
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DF200R12KL-A | ETC | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048 |
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DF200R12PT4_B6 | INFINEON | Insulated Gate Bipolar Transistor |
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DF200R12PT4B6BOSA1 | INFINEON | Insulated Gate Bipolar Transistor, |
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