是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-G2 | Reach Compliance Code: | compliant |
Factory Lead Time: | 25 weeks | 风险等级: | 5.76 |
最大击穿电压: | 9.5 V | 最小击穿电压: | 5.5 V |
击穿电压标称值: | 7.5 V | 最大钳位电压: | 14 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | R-PDSO-G2 |
JESD-609代码: | e3 | 最大非重复峰值反向功率耗散: | 130 W |
元件数量: | 2 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性: | BIDIRECTIONAL |
最大功率耗散: | 0.2 W | 参考标准: | AEC-Q101; IEC-61000-4-2, 4-5 |
最大重复峰值反向电压: | 5 V | 最大反向电流: | 0.1 µA |
反向测试电压: | 5 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DESD5V0S1BB | DIODES |
获取价格 |
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DESD5V0S1BL | DIODES |
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LOW CAPACITANCE BIDIRECTIONAL TVS DIODE |
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DESD5V0S1BL-7B | DIODES |
获取价格 |
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE |
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DESD5V0S1BLD | DIODES |
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DESD5V0S1BLD-7B | DIODES |
获取价格 |
Trans Voltage Suppressor Diode, 130W, 5V V(RWM), Bidirectional, 1 Element, Silicon, X2-DFN |
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DESD5V0S1BLP3 | DIODES |
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DESD5V0S1BLP3-7 | DIODES |
获取价格 |
Trans Voltage Suppressor Diode, 145W, 5V V(RWM), Bidirectional, 1 Element, Silicon, X3-DFN |
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DESD5V0U1BA | DIODES |
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DESD5V0U1BB | DIODES |
获取价格 |
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE |
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DESD5V0U1BB-7 | DIODES |
获取价格 |
Trans Voltage Suppressor Diode, 5V V(RWM), Bidirectional, 2 Element, Silicon, |
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