WTE
POWER SEMICONDUCTORS
Pb
DD3520/S & DD3524/S
35A GLASS PASSIVATED AVALANCHE DISH TYPE PRESS-FIT DIODE
Features
!
Glass Passivated Die Construction
!
!
!
!
!
Low Leakage
Low Cost
High Surge Current Capability
Low Forward
C-Band Terminal Construction
C
Anode +
D
Mechanical Data
B
!
Case: 8.4mm or 9.5mm Dish Type Press-Fit
with Silicon Rubber Sealed on Top
A
!
!
Terminals: Contact Areas Readily Solderable
Polarity: Cathode to Case (Reverse Units Are
Available Upon Request and Are Designated
By A “R” Suffix, i.e. DD3520R or DD3520SR)
Polarity: White Color Equals Standard,
Black Color Equals Reverse Polarity
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
8.4mm Dish
9.5mm Dish
Dim
A
Min
8.25
2.00
Max
Min
9.30
2.0
Max
9.70
2.40
8.45
2.40
!
B
C
1.50 Ø Typical
17.50
!
!
D
17.50
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—
All Dimensions in mm
“S” Suffix Designates 8.4mm Dish
No Suffix Designates 9.5mm Dish
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
DD3520/S
DD3524/S
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
16
20
V
Average Rectified Output Current
@TC = 150°C
IO
35
A
V
Breakdown Voltage Min.
Breakdown Voltage Max.
@IR = 100mA
@IR = 100mA
20
26
24
32
VBR
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
400
A
Forward Voltage
@IF = 35A
VFM
IRM
1.0
V
Peak Reverse Current
At Rated DC Blocking Voltage
200
nA
@TA = 25°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Cj
300
1.0
pF
°C/W
°C
RꢀJC
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
DD3520/S & DD3524/S
1 of 2
© 2006 Won-Top Electronics