DB105S-T

更新时间： 2024-01-10 20:12:10

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
2页	25K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN

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技术参数
数据手册

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DB105S-T 技术参数

生命周期：	Obsolete	包装说明：	R-PDIP-W4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.82	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	R-PDIP-W4	最大非重复峰值正向电流：	30 A
元件数量：	4	相数：	1
端子数量：	4	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	WIRE
端子位置：	DUAL

DB105S-T 数据手册

DB101

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

DB107

SINGLE-PHASE GLASS PASSIVATED

SILICON BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* Good for automation insertion

* Surge overload rating - 50 amperes peak

* Ideal for printed circuit board

* Reliable low cost construction utilizing molded

* Glass passivated device

DB-1

* Polarity symbols molded on body

* Mounting position: Any

* Weight: 1.0 gram

(

)

FEATURES

.255 6.5

(

)

.245 6.2

Epoxy : UL flammability classification 94V-0

(

)

.350 8.9

UL listed under the recognized component directory, file #E94233.

(

.300 7.6

(8.51)

(8.12)

.335

.320

(

)

.135 3.4

(

)

.115 2.9

(

)

.165 4.2

.020

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

(

.155 3.9

(

)

0.5

.060

(

)

.205 5.2

(

)

1.5

(

.195 5.0

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

DB101

DB102

100

DB103

200

DB104

400

DB105

600

DB106

800

DB107 UNITS

RRM

RMS

1000

700

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

140

280

420

560

Maximum DC Blocking Voltage

100

200

400

1.0

600

800

1000

Volts

Maximum Average Forward Output Current at T

= 40^oC

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

Amps

⁰C

STG

-65 to + 150

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

CHARACTERISTICS

SYMBOL

DB101

DB102

DB103

DB104

1.1

DB105

DB106

DB107 UNITS

Volts

Maximum Forward Voltage Drop per Bridge

Element at 1.0A DC

uAmps

mAmps

1998-8

Maximum Forward Voltage Drop per Bridge

DC Blocking Voltage per element

= 25^oC

= 125^oC

10.0

0.5

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