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D3V3P4U10LP26 PDF预览

D3V3P4U10LP26

更新时间: 2023-12-06 20:11:39
品牌 Logo 应用领域
美台 - DIODES 电视
页数 文件大小 规格书
5页 307K
描述
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

D3V3P4U10LP26 数据手册

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D3V3P4U10LP26  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Peak Pulse Current  
Symbol  
IPP  
Value  
25  
Unit  
A
Conditions  
8/20µs (Note 7)  
ESD Protection Contact Discharge  
ESD Protection Air Discharge  
±30  
kV  
Standard IEC 61000-4-2  
Standard IEC 61000-4-2  
VESD_Contact  
VESD_Air  
±30  
kV  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 5)  
Symbol  
Value  
500  
Unit  
mW  
C/W  
C  
PD  
250  
Thermal Resistance, Junction to Ambient TA = +25°C  
Operating and Storage Temperature Range  
RθJA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Reverse Standoff Voltage  
Symbol  
VRWM  
IR  
Min  
Typ  
Max  
3.3  
Unit  
V
Test Conditions  
VR = 3.3V, Any I/O to GND  
IR = 1mA, from pin 5 to pin 2  
Channel Leakage Current (Note 6)  
Reverse breakdown voltage  
1000  
6.5  
6.7  
8.5  
12  
nA  
V  
V
3.8  
VBR  
IPP = 1A, tP = 8/20μs  
IPP = 10A, tP = 8/20μs  
IPP = 25A, tP = 8/20μs  
Clamping Voltage, Positive Transients (Note 7)  
VC  
V
V
VR = 0V, f = 1MHz, Any I/O to  
GND  
Channel Input Capacitance (Note 8)  
Dynamic Resistance  
3.8  
0.3  
5
pF  
CT  
RDYN  
IPP = 1A, tP = 8/20μs  
Notes:  
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at  
http://www.diodes.com.  
6. Short duration pulse test used to minimize self-heating effect.  
7. Clamping voltage value is based on an 8x20µs peak pulse current (IPP) waveform.  
8. Measured from any I/O to GND.  
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the  
following URL: http://www.diodes.com/destools/appnote_dnote.html.  
600  
550  
100  
75  
Note 5  
500  
450  
400  
350  
50  
300  
250  
200  
150  
100  
25  
0
50  
0
0
25  
50  
TA, AMBIENT TEMPERATURE (  
()  
150 175 200  
75 100 125  
0
25  
50  
75  
100  
125  
150 175  
)
TA, AMBIENT TEMPERATURE (°C)  
Figure 1 Power Derating Curve  
Figure 2 Pulse Derating C
2 of 5  
www.diodes.com  
January 2016  
© Diodes Incorporated  
D3V3P4U10LP26  
Document number: DS38261 Rev. 2 - 2  

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