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D1213A-01LP4 PDF预览

D1213A-01LP4

更新时间: 2023-12-06 20:11:37
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D1213A-01LP4  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
IPP  
Value  
5
Unit  
A
Conditions  
8/20μs, Per Figure 2  
Peak Pulse Current  
Standard IEC 61000-4-2  
Standard IEC 61000-4-2  
ESD Protection – Contact Discharge  
ESD Protection – Air Discharge  
±8  
kV  
kV  
VESD_Contact  
VESD_Air  
±15  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Package Power Dissipation (Note 5)  
250  
500  
mW  
PD  
Thermal Resistance, Junction to Ambient (Note 5)  
Operating and Storage Temperature Range  
°C/W  
°C  
Rθ  
JA  
TJ, TSTG  
-65 to +150  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Reverse working voltage  
Reverse current (Note 6)  
Symbol  
VRWM  
IR  
Min  
Typ  
0.1  
Max  
3.3  
1.0  
Unit  
V
μA  
V
Test Conditions  
VR = VRWM = 3.3V  
R = 1mA  
Reverse breakdown voltage  
Forward voltage  
VBR  
6.0  
0.6  
I
0.8  
10.0  
-1.7  
0.9  
0.85  
0.95  
V
VF  
VCL1  
VCL2  
RDYN  
CT  
IF = 8mA  
Reverse clamping voltage, Positive Transients  
Reverse clamping voltage, Negative Transients  
Dynamic resistance  
V
IPP = 1A, tp = 8/20μs  
IPP = -1A, tp = 8/20μs  
IR = 1A, tp = 8/20μs  
VR = 1.65V, f = 1MHz  
V
Capacitance  
1.2  
pF  
Notes:  
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at  
http://www.diodes.com.  
6. Short duration pulse test used to minimize self-heating effect.  
100  
100  
50  
0
75  
50  
25  
0
60  
20  
40  
0
0
25  
50  
75 100 125 150 175 200  
t, TIME (  
μs)  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Pulse Derating Curve  
Fig. 2 Pulse Waveform  
2 of 4  
www.diodes.com  
August 2012  
© Diodes Incorporated  
D1213A-01LP4  
Document number: DS35760 Rev. 5 - 2  

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