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5962-8872503XX PDF预览

5962-8872503XX

更新时间: 2024-02-24 07:46:17
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
11页 144K
描述
Standard SRAM, 256KX1, 55ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-8872503XX 技术参数

生命周期:Obsolete包装说明:CERAMIC, LCC-28
Reach Compliance Code:unknown风险等级:5.49
最长访问时间:55 nsJESD-30 代码:R-CQCC-N28
JESD-609代码:e0长度:13.97 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:1功能数量:1
端子数量:28字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX1封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:2.03 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUAD宽度:8.89 mm

5962-8872503XX 数据手册

 浏览型号5962-8872503XX的Datasheet PDF文件第2页浏览型号5962-8872503XX的Datasheet PDF文件第3页浏览型号5962-8872503XX的Datasheet PDF文件第4页浏览型号5962-8872503XX的Datasheet PDF文件第5页浏览型号5962-8872503XX的Datasheet PDF文件第6页浏览型号5962-8872503XX的Datasheet PDF文件第7页 
SRAM  
MT5C2561  
Austin Semiconductor, Inc.  
256K x 1 SRAM  
PIN ASSIGNMENT  
SRAM MEMORY ARRAY  
(Top View)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
• SMD 5962-88725  
• SMD 5962-88544  
• MIL-STD-883  
24-Pin DIP (C)  
(300 MIL)  
A6  
A7  
A8  
1
2
3
4
5
6
7
8
9
10  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
Vcc  
A5  
A4  
A3  
A2  
FEATURES  
A9  
• High Speed: 35, 45, 55, and 70  
• Battery Backup: 2V data retention  
• Low power standby  
• High-performance, low-power, CMOS double-metal  
process  
• Single +5V (+10%) Power Supply  
• Easy memory expansion with CE\  
• All inputs and outputs are TTL compatible  
A10  
A11  
A14  
A15  
A0  
A1  
A17  
A16  
A13  
A12  
D
Q
WE\ 11  
Vss 12  
CE\  
28-Pin LCC (EC)  
OPTIONS  
• Timing  
MARKING  
3
2 1 28 27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
35ns access  
45ns access  
55ns access  
70ns access  
-35  
-45  
-55*  
-70*  
NC  
A4  
NC  
A9  
A10  
A11  
A14  
A15  
A0 10  
Q 11  
NC 12  
4
5
6
7
8
9
A3  
A2  
A1  
A17  
A16  
A13  
NC  
• Package(s)  
13 14 15 16 17  
Ceramic DIP (300 mil)  
CeramicLCC  
C
EC  
No. 106  
No. 204  
• Operating Temperature Ranges  
Industrial (-40oC to +85oC)  
IT  
XT  
GENERAL DESCRIPTION  
Military (-55oC to +125oC)  
The Austin Semiconductor SRAM family employs  
high-speed, low-power CMOS and are fabricated using double-  
layer metal, double-layer polysilicon technology.  
• 2V data retention/low power  
L
For flexibility in high-speed memory applications,  
Austin Semiconductor offers chip enable (CE\) on all organiza-  
tions. This enhancement can place the outputs in High-Z for  
additional flexibility in system design. The x1 configuration  
features separate data input and output.  
*Electrical characteristics identical to those provided for the 45ns  
access devices.  
Writing to these devices is accomplished when write  
enable (WE\) and CE\ inputs are both LOW. Reading is accom-  
plished when WE\ remains HIGH and CE\ goes LOW. The  
device offers a reduced power standby mode when disabled.  
This allows system designs to achieve low standby power re-  
quirements.  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
These devices operate from a single +5V power sup-  
ply and all inputs and outputs are fully TTL compatible.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C2561  
Rev. 2.5 1/01  
1

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