Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC2002
TO-92
Plastic Package
Designed for use in Driver Stage of High Voltage Audio Equipments.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
VALUE
60
UNITS
V
DESCRIPTION
SYMBOL
VCEO
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
VCBO
VEBO
IC
60
V
5
V
300
60
mA
mA
mW
IB
Base Current
PC
600
Collector Power Dissipation
Tstg
Tj
ºC
ºC
Storage Temperature
Junction Temperature
- 55 to +150
+150
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
VCB=60V, IE = 0
MIN
TYP
MAX
100
100
400
UNITS
nA
ICBO
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
IEBO
VEB=5V, IC = 0
VCE=1V, IC=50mA
VCE=2V, IC=300mA
IC=300mA, IB=30mA
IC=300mA, IB=30mA
VCE=6V, IC=10mA
VCE=6V, IC= -10mA,
IE=0, VCB=6V, f=1MHz
nA
(1)
90
30
hFE
*
VCE (sat)
VBE (sat)
VBE *
fT
*
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter Voltage
0.6
1.2
0.7
V
V
*
0.6
50
V
Transition Frequency
MHz
pF
Cob
Collector to Base Capacitance
15
* Pulsed PW <350ms, Duty Cycle <2%
hFE (1) Classification
L : 135 - 270,
K : 200 - 400
M : 90 - 180,
Data Sheet
Page 1 of 3
Continental Device India Limited