Datasheet > CS2N60A4RZ-G

CS2N60A4RZ-G

更新时间： 2024-06-27 12:13:50

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	575K
描述
TO-252

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CS2N60A4RZ-G 数据手册

Silicon N-Channel Power MOSFET

CS2N60 A4RZ-G

○

General Description：

V_DSS

600

CS2N60 A4RZ-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-252, which accords with the RoHS standard.

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

3.6

Ω

 Fast Switching



Low ON Resistance(Rdson≤4.5Ω)

 Low Gate Charge (Typical Data: 9.5nC)

 Low Reverse transfer capacitances(Typical:3pF)

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

600

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

1.3

I_DM

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

E_AS

5.0

dv/dt

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

0.28

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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