Datasheet > CS230N06B0

CS230N06B0

更新时间： 2024-03-03 10:09:32

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	429K
描述
TO-263(或D2PAK)

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CS230N06B0 数据手册

CS230N06 B0

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Electrical Characteristics（TJ= 25℃ unless otherwise specified）：

OFF Characteristics

Rating

Typ.

Parameter

Test Conditions

Symbol

V_DSS

Units

Min.

Max.

V_GS=0V, I_D=250µA

Drain to Source Breakdown Voltage

V_DS= 60V, V_GS= 0V,

T_a= 25℃

V_DS=48V, V_GS= 0V,

T_a= 125℃

Drain to Source Leakage Current

I_DSS

µA

100

-100

V_GS=20V

Gate to Source Forward Leakage

Gate to Source Reverse Leakage

I_GSS(F)

I_GSS(R)

V_GS=-20V

ON Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min. Typ. Max.

V_GS=10V,I_D=95A

Drain-to-Source On-Resistance

Gate Threshold Voltage

R_DS(ON)

V_GS(TH)

3.0

3.6

4.0

mΩ

V_DS= V_GS, I_D= 250µA

2.0

Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics

Rating

Symbol

Parameter

Test Conditions

Units

Min. Typ. Max.

VGS=0V, VDS=0V, f=1MHz

Gate resistance

R_g

1.3

Ω

Input Capacitance

C_iss

C_oss

C_rss

5681

734.8

371.5

V_GS= 0V V_DS=25V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Resistive Switching Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min. Typ. Max.

Turn-on Delay Time

Rise Time

t_d(ON)

t_d(OFF)

t_f

41.9

47.0

70.9

29.3

98.4

29.0

33.2

VGS=10V, VDS=30V,

Id=115A,

Rg=6Ω

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain (“Miller”)Charge

Q_g

VDS=48V, ID=115A,

VGS=10V

Q_gs

Q_gd

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