Datasheet > CS230N06B0

CS230N06B0

更新时间： 2024-03-03 10:09:32

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	429K
描述
TO-263(或D2PAK)

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CS230N06B0 数据手册

Silicon N-Channel Power MOSFET

CS230N06 B0

○

General Description：

V_DSS

I_D_（

230

284

CS230N06 B0, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-263, which accords with the RoHS standard.

Silicon limited current^）

PD(T_C=25℃)

R_DS(ON)Typ

mΩ

Features：

l Fast Switching

l Low ON Resistance(Rdson≤3.6 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（TC= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current(Silicon Limited)

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

230

I_D

145

920

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

1024

E_AS

Avalanche Current

284

I_AS

Power Dissipation

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

2.272

W/℃

℃

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 9

2019V01

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