Datasheet > CS21N03AQ2-1

CS21N03AQ2-1

更新时间： 2024-04-09 19:03:06

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	488K
描述
DFN3×3

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CS21N03AQ2-1 数据手册

Silicon N-Channel Power MOSFET

CS21N03 AQ2-1

○

General Description：

V_DSS

CS21N03 AQ2-1, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications.. The

package form is DFN3×3-8L, which accords with the RoHS

standard.

I_D

13.8

R_DS(ON)Typ

mΩ

Features：

Top View

l Fast Switching

l Low ON Resistance(Rdson≤21 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

TV screen drive.

Absolute（TA= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current Tc= 25°C

Continuous Drain Current Tc = 100 °C

Pulsed Drain Current Tc= 25°C

Gate-to-Source Voltage

I_D

I_DM

V_GS

±20

80.6

Avalanche Energy

E_AS

13.8

Power Dissipation TC= 25°C

Derating Factor above 25°C

P_D

0.11

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

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