Datasheet > CRMB0305C

CRMB0305C

更新时间： 2024-04-09 19:03:17

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
11页	1376K
描述
PDFN3.3x3.3D

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CRMB0305C 数据手册

CRMB0305C

30V Complementary Power MOSFET

华润微电子(重庆)有限公司

Features

Product Summary

Symbol

V_DS

N-Ch

30V

P-Ch

-30V

• Uses CRM(CQ) advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Complementary N-ch and P-ch MOSFET

R_{DS(on) typ.}

I_D

15mΩ

11A

55mΩ

-11A

100% DVDS Tested

Applications

• Motor drive

100% Avalanche Tested

Package Marking and Ordering Information

Part #

Marking

B0305C

Package

Packing

Taping

Reel Size

N/A

Tape Width

N/A

Qty

CRMB0305C

PDFN3.3x3.3D

5000pcs

Absolute Maximum Ratings

Parameter

Maximum

Symbol

Unit

N-Ch

P-Ch

V_DS

I_D

Drain-source voltage

-30

Continuous drain current T_C= 25°C (Silicon limit)

Continuous drain current T_C= 25°C (Package limit)

-12

-11

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

-43

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

V_GS

±20

15.9

±12

15.9

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Rev2.1

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...11

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