CRJQ125N60G2F
华润微电子(重庆)有限公司
SJMOS N-MOSFET 600V, 95mΩ, 22A
Features
Product Summary
• CRM(CQ) Super_Junction technology
• Much lower Ron*A performance for On-state efficiency
• Better efficiency due to very low FOM
• Ultra-fast body diode
VDS
600V
95mΩ
22A
RDS(on)_typ
ID
Applications
100% DVDS Tested
• LED/LCD/PDP TV and monitor Lighting
• Solar/Renewable/UPS-Micro Inverter System
• Charger
100% Avalanche Tested
• Power Supply
Package Marking and Ordering Information
Part #
Marking
-
Package
Packing
Tube
Reel Size
Tape Width
N/A
Qty
CRJQ125N60G2F
TO-247-3L
N/A
25pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drain-source voltage
600
V
Continuous drain current
TC = 25°C
ID
A
22
13
TC = 100°C
Pulsed drain current (TC = 25°C, tp limited by Tjmax
)
ID pulse
EAS
88
300
A
mJ
V
Avalanche energy, single pulse (L=30mH, Rg=30Ω)
Gate-Source voltage
VGS
±30
Power dissipation (TC = 25°C)
Ptot
229
W
°C
Tj , T stg
Operating junction and storage temperature
-55...+150
Rev1.0
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