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CR3AM

更新时间: 2024-06-27 12:13:25
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3页 341K
描述
Triacs

CR3AM 数据手册

 浏览型号CR3AM的Datasheet PDF文件第2页浏览型号CR3AM的Datasheet PDF文件第3页 
Thyristor  
SMD Type  
Silicon Bidirectional Thyristors  
CR3AM  
TO-252  
Unit: mm  
+0.15  
6.50  
-0.15  
+0.1  
2.30  
-0.1  
Features  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
Blocking voltage to 400 V  
General purpose bidirectional switching  
0.127  
max  
+0.1  
0.80  
-0.1  
2
1
3
+0.1  
0.60  
-0.1  
2.3  
1.T1  
+0.15  
-0.15  
4.60  
2.T2  
3.GATE  
T2  
T1  
G
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
Rating  
400  
Unit  
V
Repetitive peak off-state voltages  
VDRM,VRRM  
3
30  
)
RMS on-state current  
Non-repetitive peak on-state current  
IT(RMS  
ITSM  
A
A
I2t  
A2s  
V
3.7  
6
Circuit Fusing Considerations (t = 8.3 ms)  
Peak Gate Voltage  
VGM  
(
)
Average Gate Power  
PG AV  
0.3  
3
W
W
PGM  
IGM  
TJ  
Peak Gate Power  
0.5  
A
Peak Gate Current  
Operating Junction Temperature Range  
Storage Temperature Range  
-40 to 125  
-40 to 150  
stg  
T
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
IDRM, IRRM  
VTM  
Test conditions  
Min  
Typ Max Unit  
VD = Rated VDRM, VRRM ;Gate Open  
IT=4.5, A  
mA  
V
Peak Repetitive Blocking Current  
Peak On-State Voltage  
2
1.5  
30  
30  
30  
2
T (+), G(+)  
mA  
mA  
mA  
mA  
V
VD= 6 V,  
2
T (+), G(-)  
RL= 6 Ω  
Gate trigger current  
IGT  
RG=330  
Ω
2
T (-), G(-)  
2
T (-), G(+)  
-
2
T (+), G(+)  
1.5  
1.5  
1.5  
-
VD= 6 V,  
2
T (+), (-)  
G
V
RL= 6 Ω  
Gate trigger voltage  
VGT  
RG=330  
Ω
2
T (-), G(-)  
V
2
T (-), G(+)  
V
DC Gate Non-trigger Voltage  
VGD  
VD=1/2VDRM  
0.2  
V
Marking  
CR3AM  
Marking  
1
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