Silicon N-Channel Power MOSFET
CR2N65 A4K
General Description:
VDSS
650
2
V
A
CR2N65 A4K, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
ID
PD(TC=25℃)
RDS(ON)Typ
43
5.6
W
Ω
Features:
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
650
V
A
Continuous Drain Current
2
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
1.3
A
a1
8
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
50
mJ
V/ns
W
EAS
a3
5.0
dv/dt
43
0.34
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
W/℃
℃
TJ,Tstg
150,–55 to 150
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2021V02