Datasheet > CPZ58X-BZX84C12

CPZ58X-BZX84C12

更新时间： 2024-04-09 18:58:17

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	405K
描述
12V,350mW Bare die,12.990 X 12.990 mils,Diode-Zener

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CPZ58X-BZX84C12 数据手册

CPZ58X-BZX84C2V4 THRU

CPZ58X-BZX84C15

Zener Diode Die

350mW, 2.4 THRU 15 VOLT

www.centralsemi.com

The CPZ58X-BZX84C2V4 thru CPZ58X-BZX84C15 are silicon Zener diodes ideal for all types of

commercial, industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

13 x 13 MILS

5.5 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.9 x 5.9 MILS

AlSiCu – 35kÅ

Au-As – 12,000Å

1.69 MILS

6 INCHES

Gross Die Per Wafer

142,858

BACKSIDE CATHODE

MAXIMUM RATINGS:

Operating and Storage Junction Temperature

SYMBOL

UNITS

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C) V =0.9V MAX @ I =10mA (for all types)

ZENER

VOLTAGE

MAXIMUM

REVERSE

CURRENT

MAXIMUM

ZENER

CURRENT COEFFICIENT

MAXIMUM

TEMPERATURE

TEST

CURRENT

MAXIMUM

ZENER IMPEDANCE

@ I

TYPE

MIN

NOM

MAX

@ I

ΘV

5.0

1.0

µA

104

% / °C

-0.06

CPZ58X-BZX84C2V4

CPZ58X-BZX84C2V7

2.2

2.5

2.4

2.7

2.6

2.9

100

600

1.0

CPZ58X-BZX84C3V0

2.8

3.0

3.2

5.0

600

1.0

-0.06

CPZ58X-BZX84C3V3

CPZ58X-BZX84C3V6

CPZ58X-BZX84C3V9

CPZ58X-BZX84C4V3

CPZ58X-BZX84C4V7

CPZ58X-BZX84C5V1

CPZ58X-BZX84C5V6

CPZ58X-BZX84C6V2

CPZ58X-BZX84C6V8

CPZ58X-BZX84C7V5

CPZ58X-BZX84C8V2

CPZ58X-BZX84C9V1

CPZ58X-BZX84C10

CPZ58X-BZX84C11

3.1

3.4

3.7

4.0

4.4

4.8

5.2

5.8

6.4

7.0

7.7

8.5

9.4

10.4

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

3.5

3.8

4.1

4.6

5.0

5.4

6.0

6.6

7.2

7.9

8.7

9.6

10.6

11.6

5.0

600

500

480

400

150

1.0

5.0

3.0

2.0

1.0

3.0

2.0

1.0

0.7

0.5

0.2

0.1

1.0

2.0

4.0

5.0

6.0

7.0

8.0

-0.06

-0.05

-0.03

0.02

0.03

0.04

0.05

0.06

0.07

100

150

R1 (11-September 2023)

12 3 4

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