CMZ12~CMZ53
TOSHIBA Zener Diode Silicon Diffused Type
CMZ12~CMZ53
Applications:
Unit: mm
Communication, Control and
Measurement Equipment
Constant Voltage Regulation
Transient Suppressors
•
•
•
Average power dissipation
Zener voltage
: P = 2.0 W
: V = 12 V ~ 53 V
Z
Suitable for compact assembly due to small surface-mount package
TM
“M−FLAT ” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Symbol
P
Rating
Unit
2.0 (Note 1)
−40~150
W
°C
°C
Junction temperature
T
j
Storage temperature range
T
stg
−40~150
JEDEC
JEITA
―
―
Note 1: Ta = 30°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
Soldering size: 2 mm × 2 mm
Board thickness: 0.64 t
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Standard Soldering Pad
Unit: mm
1.4
3.0
1.4
Start of commercial production
2002-10
1
2013-11-01