Datasheet > CMPFCD86

CMPFCD86

更新时间： 2024-02-04 22:07:35

品牌	Logo	应用领域
虹冠电子 - CHAMP		二极管功率因数校正
页数	文件大小	规格书
5页	135K
描述
PFC Diode (8A/600V)

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技术参数
数据手册

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CMPFCD86 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

CMPFCD86 数据手册

CMPFCD86

PFC Diode (8A/600V)

FEATURES

Fast switching for high efficiency

Low noise

Trr = 20ns

Low reverse leakage current

High voltage super FRD

PFC application

MECHANICAL DATA

Case : Molded plastic TO-220AC / TO-220FP / SMC

Epoxy : UL94V-0 rate flame retardant

Terminals : Solderable per MIL-STD-202 method 208

Mounting position : Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave , 60Hz , resistive or inductive load.

For capacitive load , derate current by 20%

CMPFCD86

Symbol

Characteristics

Recurrent Peak Reverse Voltage

Unit

Rating

620

V_RRM

V_RMS

V_DC

RMS Voltage

425

DC Blocking Voltage

620

Average Forward Rectified Current @Tc=140℃

8.0

150

2.4

IF_(AV)

Peak Forward Surge Current

8.3ms single half sine-wave

Super imposed on rated load (JEDEC Method)

I_FSM

V_F

Instantaneous Forward Voltage @8A

1.0

500

DC Reverse Current @T_J=25℃

I_R

At Rated DC Blocking Voltage

@T_J=150℃

Trr

C_J

Maximum Reverse Recovery Time (note1)

Typical Junction Capacitance

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

(note2)

(note3)

℃/ W

℃

2.2

R_θJC

T_J

-65~175

℃

T_STG

Notes : 1. Reverse recovery test conditions I_F=0.5A , I_R=1.0A , Irr=0.25A

2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts DC.

3. Thermal Resistance junction to case.

2009/04/30 Rev1.0

Champion Microelectronic Corporation

Page 1

12 3 4 5

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